Abstract:In this work the self-assembling of InAs quantum dots (QDs) within asymmetric barriers of (Al)GaAs is studied via reflection high energy electron diffraction (RHEED). A comparative study between the AlGaAs/InAs/GaAs interfaces and its mirror-like heterostructure GaAs/InAs/AlGaAs showed significant differences in the self-assembling and capping of the QDs. The critical thickness of InAs QDs results was proven to be larger when it is grown on AlGaAs alloys, compared with the deposition on GaAs layers. This change is explained by the reduced mobility of In atoms on the Al-containing surfaces, for which the QDs density is increased due to the strain relieve. Through the in-situ analysis of diffusion parameters, it is concluded that the mobility of In atoms decreases the mass transport of 2D and 3D precursors that conduces to the self-assembling of the QDs nanoislands, modifying the rate at which the QDs are formed. Further, during the first stages of QDs capping it is observed that the III-V materials intermixing plays a predominant role. The nanoislands are less affected when are covered by AlGaAs in comparison with the GaAs capping, preserving the QDs morphology and avoiding materials alloying. By following the RHEED intensity behavior during the QDs capping, a model was proposed to obtain quantitative parameters for the smoothing process. High resolution x ray diffraction (HRXRD) measurements show the composition of sharp interfaces for the AlGaAs/InAs/GaAs heterostructure. Lastly, numerical simulations were performed to evaluate the strain changes using the experimental information as input data.

Study of Nanometer-Scale Structures and Electrostatic Properties of InAs Quantum Dots Decorating GaAs/AlAs Core/shell Nanowires

Study of the Polarization Effect in InAs Quantum Dots/GaAs Nanowires

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Study of Charge Distributions and Electrical Properties in GaAs/AlGaAs Single Quantum Well/Nanowire Heterostructures

Fabrication and Optical Properties of Multishell Inas Quantum Dots on Gaas Nanowires

Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Modeling InAs Quantum-Dot Formation on the Side Surface of GaAs Nanowires

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Realization of Stranski-Krastanow InAs quantum dots on nanowire-based InGaAs nanoshells

InAs/InP radial nanowire heterostructures as high electron mobility devices

The Effect of a Combined InAlAs and GaAs Strained Buffer Layer on the Structure and Optical Property of InAs Quantum Dots

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Growth of High Density Self-Assembled InAs Quantum Dots on As-pressure-modulated InAlAs Multilayer Structures on InP(001) Substrate

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Growth and Characterization of Inas Quantum Dots on Inp Nanowires with Zinc Blende Structure

In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet of GaAs nanowire

Light Absorption Properties of a Nanowire/quantum-Dot Hybrid Nanostructure Array