Abstract:InAs@InP core@shell quantum dots (QDs) are synthesized employing amino‐As and amino‐P precursors. The InP shell preferentially grows along directions, leading to tetrapodal‐shaped QDs. These results reveal that such heterostructures behave as "larger InAs QDs" and cannot be accurately described as type‐I or quasi type‐II. Embedding them in ZnSe leads to InAs@InP@ZnSe QDs with a photoluminescence efficiency as high as ≈55%. A colloidal synthesis protocol is demonstrated for InAs@InP core@shell quantum dots (QDs) with a tunable InP shell thickness (ranging from 3 to 8 monolayers), utilizing tris(diethylamino)‐arsine and ‐phosphine. Structural analysis reveals that the InP shell preferentially grows onto the tetrahedral InAs cores along the directions, forming tetrapodal‐shaped InAs@InP QDs. Growth of the InP shell causes a red shift in the absorption spectrum of the QDs. This is explained by considering that electrons are delocalized throughout the whole core@shell QDs, while holes preferentially leak along the directions, as indicated by the density functional theory calculations. This means such heterostructures cannot be described as type‐I or quasi type‐II, contrary to earlier assumptions. The overlap of carrier wavefunctions throughout the entire InAs@InP QD structure results in no significant reduction of the Auger recombination rate, which remains as fast as in InAs QDs. However, the InP shell enhances photoluminescence (PL) efficiency (up to ≈13%) by passivating surface trap states of the InAs QDs (mainly located close to the top of the valence band). The overgrowth of a ZnSe shell endows the QDs with a high PL efficiency (≈55%) and good stability upon air exposure (≈80% PL intensity retention after 14 days).

Growth and Characterization of Inas Quantum Dots on Inp Nanowires with Zinc Blende Structure

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Zincblende InAsxP1- x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces

The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix

Amino‐Arsine and Amino‐Phosphine Based Synthesis of InAs@InP@ZnSe core@shell@shell Quantum Dots

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Epitaxial nanowires Evolution of Epitaxial InAs Nanowires on GaAs ( 111 ) B * *

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Defect-Free <110> Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Colloidal Chemical Synthesis and Characterization of InAs Nanocrystal Quantum Dots

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

Epitaxial growth of quantum dots on van der Waals surfaces

Sequential Growth of InP Quantum Dots and Coordination Between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Anisotropies of the G-Factor Tensor and Diamagnetic Coefficient in Crystal-Phase Quantum Dots in InP Nanowires