Abstract:A 100 periods In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multiple quantum wells (MQWs) with and without 2 ML InAs insertion layers (ISLs) were grown on semi-insulating GaAs (001) substrates by molecular beam epitaxy (MBE). The stress-strain was weakened by inserting two monolayers of InAs between the In 0.53 Ga 0.47 As well layer and the In 0.52 Al 0.48 As barrier layer. High-resolution transmission electron microscopy (HRTEM) was investigated to visually characterize the crystal quality of MQW structures with and without InAs ISLs. The effect of structural and optical properties of the In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As MQWs by InAs-inserting were characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectra. The research shows that the introduction of the 2 ML InAs ISLs can eliminate the strain and reduce the average dislocation density from 2.4×10 8 cm −2 to 1.4×10 8 cm −2 in the InGaAs/InAlAs MQWs structure, then control the interface between InGaAs and InAlAs, and finally realize the improvement of the quantum well structural and optical properties with the PL intensity increased by one order of magnitude. Our studies have great significance to the fabrication of GaAs-based multiple quantum well optoelectronic devices, which promote the further development of high-performance versatile optoelectronic applications.

The Effect of a Combined InAlAs and GaAs Strained Buffer Layer on the Structure and Optical Property of InAs Quantum Dots

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

1.3-μm InAs/GaAs quantum dots grown on Si substrates

Effects Of Gaas On Photoluminescence Properties Of Self-Assembled Inas Quantum Dots

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

1.55Μm InAs Quantum Dots Grown on a GaAs Substrate Using a GaAsSb Metamorphic Buffer Layer

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells

Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate

Influences of Si sheet doping densities on the morphological, conductive and optical characteristics of InAs/GaAs quantum dots