Abstract:We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $\mu$m. Photoluminescence (PL) measurements for QWs having Sb compositions up to $x = 10$\% demonstrate strong room temperature emission up to 3.4 $\mu$m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8-band $\vec{k} \cdot \vec{p}$ Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Our results highlight the potential of type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of mid-infrared light-emitting diodes.

1.55Μm InAs Quantum Dots Grown on a GaAs Substrate Using a GaAsSb Metamorphic Buffer Layer

Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

InSb Quantum Dots for the Mid-Infrared Spectral Range Grown on GaAs Substrates Using Metamorphic InAs Buffer Layers

The Effect of a Combined InAlAs and GaAs Strained Buffer Layer on the Structure and Optical Property of InAs Quantum Dots

1.3-μm InAs/GaAs quantum dots grown on Si substrates

Growth and Emission Tuning of InAs/InP Quantum Dots Superlattice

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

GaAs-based Long-Wavelength InAs Bilayer Quantum Dots Grown by Molecular Beam Epitaxy

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

Growth of Self-assembled InAs Quantum Dots Emitting at 1.55Μm

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

Insb Based Quantum Dot Nanostructures for Mid-Infrared Photonic Devices

2.0 Μ M Wavelength InAs Quantum Dashes Grown on a GaAs Substrate Using a Metamorphic Buffer Layer

Arsenic/phosphorus Exchange and Wavelength Tuning of in Situ Annealed InAs/InP Quantum Dot Superlattice

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Efficient Exciton Transfer from in 0.35 Ga 0.65 As Template into InAs Quantum Dots Grown on GaAs (311) B Substrates

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy