Abstract:In group III-nitride based semiconductor structures, the incorporation of high-indium-composition InGaN has been severely limited by extremely inefficient strain-induced polarization fields and prohibitively large defect densities. So far, there is no clear approach to solve this issue. Here, we have shown a new approach to incorporate high concentrations of indium in the InGaN structure by using a non-polar quasi-quantum dot heterostructure. This unique epitaxial growth was achieved by integrating a 1-dimensional nanowire and a 0-dimensional quantum dot structure using an MOCVD system. The formation of a high-efficiency quantum-sliding heterostructure and high-quality nanowire structure was confirmed by FE-SEM and TEM measurements. Furthermore, it has been suggested that such a quantum-dot structure can dramatically improve radiative recombination through a new sliding bandgap mechanism. We also found that non-polar quantum dots can not only incorporate more indium than conventional multi-quantum well structures grown on the nanowire structure, but also significantly improve crystalline quality. The PL results verified that the wavelength of quantum dots fabricated on the nanowire structure can easily shift up to 913 nm. The first demonstration in the integration of nanowire and quantum dot structures will open a new avenue to break through the limitations of high indium incorporation in photonic semiconductor systems.

Structure Properties of InN Quantum Dots in GaN Semiconductor

Electronic Structures of Inn/Gan Quantum Dots

Exciton states and interband optical transitions in InGaN quantum dots

Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Electronic Structure and Optical Properties of Zinc-Blende GaN Quantum Dots

Exciton states in strained GaN/AlxGa1-xN quantum dots

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures

Electronic Structure Of Self-Assembled Inas/Inp Quantum Dots: Comparison With Self-Assembled Inas/Gaas Quantum Dots

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Theoretical study on InxGa1-xN/GaN quantum dots solar cell