Abstract:<p>The 1-period, 2-period, 4-period and 6-period InGaN/GaN quantum wells were grown by metal organic chemical vapor deposition system. Atomic force microscopy measurements and Scanning transmission electron microscopy (STEM) high-angle annular dark field (HAADF) images were used to characterize the surface morphology and cross section structures. High-resolution Transmission Electron Microscope (HRTEM) images were shot to observe defects and non-radiative recombination centers. With increasing period number, the strain accumulated and relaxed gradually, leading to the formation of high density V-shaped pits (VPs). When the number of period increased to 4, the density of VPs was high enough to connect site by site, so that island-shaped morphology appeared between adjacent VPs. All islands can be divided into three categories according to size: large, medium and small islands. Under those large islands, the InGaN layers were cut off by the VPs generated at the bottom quantum well (QW), which also cut off the migration path of indium atoms and formed the vertically arranged indium-rich (In-rich) quantum dots (QDs). Under the medium and small islands, the InGaN layer was still continuous, but significant fluctuations of composition and thickness appeared due to strain relaxation, leading to the formation of In-rich QDs. The In-rich QDs formed in the two ways can enhance the carrier localization effect, which is conducive to the improvement of internal quantum efficiency. However, the strain also accumulated with increasing the number of periods, leading to a greater degree of strain relaxation and the formation of non-radiative recombination centers (stacking faults) in In-rich QDs, which reduced the internal quantum efficiency. By controlling strain reasonably, the internal quantum efficiency is expected to be further improved.</p>

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Size-dependent Optical Properties of InGaN Quantum Dots in GaN Nanowires Grown by MBE

Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Effects Of Matrix Layer Composition On The Structural And Optical Properties Of Self-Organized Ingan Quantum Dots

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Effect of GaN Barrier Layer Thickness on Morphology and Optical Properties of Multilayer InGaN Quantum Dots

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Surface Morphology and Optical Properties of InGaN Quantum Dots with Varying Growth Interruption Time

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Green emission from a strain-modulated InGaN active layer

Growth and Property of Surface Stress Induced InGaN Quantum Dots

Structure Properties of InN Quantum Dots in GaN Semiconductor

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells