Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

Ternary Mixed Crystal Effects on Interface Optical Phonon and Electron-Interface Optical Phonon Coupling in Wurtzite GaN/AlxGa1−xN Quantum Wells

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al X Ga 1− X N/GaN/Al Y Ga 1− Y N Quantum Well

Propagating Optical-Phonon Modes and Their Electron-Phonon Interactions in Wurtzite GaN/Al X Ga 1-X N Quantum Wells

Polar quasi-confined optical phonon modes in wurtzite quasi-one-dimensional GaN/AlxGa1-xN quantum well wires

Propagating Optical-Phonon Modes and Their Electron-Phonon Interactions in Wurtzite Gan/Alxga1-Xn Quantum Wells

Polar Vibration Spectra Of Interface Optical Phonons And Electron-Interface Optical Phonon Interactions In A Wurtzite Gan-Aln Nanowire

POLAR VIBRATION SPECTRA OF INTERFACE AND SURFACE OPTICAL PHONONS AND THEIR FRÖHLICH ELECTRON-PHONON INTERACTIONS IN FREESTANDING SYMMETRICAL AND ASYMMETRICAL WURTZITE<font>GaN/Ga</font><sub>1-x</sub><font>Al</font><sub>x</sub><font>N</font>MULTI-LAYER HETEROSTRUCTURES

Nonequilibrium electron-phonon coupling across the interfaces between Al nanofilm and GaN

Polar Oscillation and Dispersion Properties of Quasi-Confined Optical Phonon Modes in a Wurtzite GaN/AlxGa1−xN Nanowire

Dependence on Al Concentration of the Optical Phonons of AlxGa1−xN Films

Chemical composition fluctuations at interfaces in quantum well structures: effect on interface phonon modes

Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Vibrating modes and dispersive spectra of full polar optical phonons in wurtzite GaN/AlGaN rectangular nanowires

Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations

Influence of Surface Optical Phonons on Exciton Binding Energies of a Quasi-One-dimensional Wurtzite GaN-based Nanowire: Quantum Size Effect

Lattice Dynamics of Wurtzite Semiconductors Gan and Aln