Abstract:A systematic investigation about the strain distributions around the InAs/GaAs quantum dots using the finite element method is presented. A special attention is paid to influence of an In0.2Ga0.8As strain reducing layer. The numerical results show that the horizontal- and vertical-strain components and the biaxial strain are reinforced in the InAs quantum dot due to the strain-reducing layer. However, the hydrostatic strain in the quantum dot is reduced. In the framework of eight-band k.p theory, we study the band edge modi. cations due to the presence of a strain reducing layer. The results demonstrate that the strain reducing layer yields the decreasing band gap, i.e., the redshift phenomenon is observed in experiments. Our calculated results show that degree of the redshift will increase with the increasing thickness of the strain-reducing layer. The calculated results can explain the experimental results in the literature, and further confirm that the long wavelength emission used for optical fibre communication is realizable by adjusting the dependent parameters. However, based on the calculated electronic and heavy-hole wave function distributions, we find that the intensity of photoluminescence will exhibits some variations with the increasing thickness of the strain-reducing layer.

Influence of the Strain on the Energy Levels of Semiconductor Quantum Dots

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

The Strain Distributions and Carrier'S Confining Potentials of Self-Organized Inas/Gaas Quantum Dot

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Influences of Strain on Binding Energies of Excitons in InAs/GaAs Quantum Dot Molecules

The Strain Relaxation of InAs/GaAs Self-Organized Quantum Dot

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

Strain accumulation in InAs/In x Ga 1− x As quantum dots

The Elastic Strain Field Distribution of Inas/Gaas Self-Organized Periodical Quantum Dots' Array

The Influence Of Strain On Electronic Structure Of Inas/Gaas Quantum Dot With Wetting Layer

The Strain Energy Density Distribution of the Capping Layer Surface for InAs/GaAs Quantum Dot along Different Growth Directions

Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength

Influence of Strain on Built-in Dipole Moment in Asymmetric in X Ga1−x As Quantum Dot Molecules

Impact of GaNAs Strain Compensation Layer on the Electronic Structure of InAs/GaAs Quantum Dots

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

Strain accumulation in InAs/InxGa1−xAs quantum dots

Electronic Structure of Quantum Dots in (111) Direction

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Effect of the Longitudinal and Transverse Stacking Period of Inas/Gaas Quantum Dots on the Distribution of Strain Field

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method