The Influence Of Strain On Electronic Structure Of Inas/Gaas Quantum Dot With Wetting Layer

Yumin Liu,Zhongyuan Yu

DOI: https://doi.org/10.1109/CLEOPR.2007.4391217

2007-01-01

Abstract:Using the axis-symmetry finite element numerical simulations, it is demonstrated that the strain distributions and wetting layer have great influences on the electronic structure of the self-organized quantum dot.

What problem does this paper attempt to address?

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Yumin Liu,Zihuan Xu,Zhongyuan Yu,Boyong Jia,Wenjuan Lu,Pengfei Lu,Lihong Han

DOI: https://doi.org/10.1142/s0218863509004816

2009-01-01

Journal of Nonlinear Optical Physics & Materials

Abstract:This paper presents a finite element method for calculating the strain distribution, piezoelectric effects and their influences on the electronic structure of self-organized InAs/GaAs quantum dots. The models used for strain calculations are based on the continuum elastic theory, which is capable of treating the quantum dot of arbitrary shapes. A truncated pyramid shaped quantum dot model including the wetting layer is adopted in this work. The electronic energy levels of the InAs/GaAs systems are calculated by solving the three-dimension effective mass Schrödinger equation including the influences on the modification of conduction band edge due to the strain and piezoelectricity. The calculated results indicate that both strain and piezoelectric effects should be considered, especially in treating the electronic structure and optical characteristics for device applications.
The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Jia Wang,Qi Wang,Xin Guo,Xiaomin Ren,Xia Zhang,Yongqing Huang

DOI: https://doi.org/10.1117/12.921319

2011-01-01

Abstract:The effect of the graded InxGa1-xAs layer on the distribution of the strain was studied by calculating the strain of different models using the finite element method. The results demonstrate that the graded InxGa1-xAs layer can reduce the strain and thus lead to longer emission wavelength. The results also demonstrate that the graded InxGa1-xAs layer can increase strain in the GaAs capping layer which cause disadvantage to grow stacked InAs/ GaAs QD structure. But the strain can be released though increase the thickness of spacer layer when grow stacked structure.
The Elastic Strain Field Distribution of Inas/Gaas Self-Organized Periodical Quantum Dots' Array

Liu Yumin,Yu Zhongyuan

DOI: https://doi.org/10.1117/12.688966

2006-01-01

Abstract:We present detailed investigations about the elastic strain field distributions of the lens shaped InAs/GaAs self-organization quantum dots array, incorporating the effect of the longitudinal and transverse period distributions. The results show that the period distributions especially for the longitude period distribution have obvious influences to the strain field. The influence of the longitudinal and transverse periods on the strain field are just opposite in effect, especially for the line-scan path along the quantum dot's center-axis. Under suitable conditions, the effects of both periods on the strain field distribution can be partly eliminated. The results also demonstrate that one must take the quantum dot's period distribution into account when the effect of the strain field on the electronic structure is calculated. We conclude that using the isolated quantum dot model is not appropriate to simulate the strain field, or evaluate the influence of it on electronic structure.
Influence of Strain on Built-in Dipole Moment in Asymmetric in X Ga1−x As Quantum Dot Molecules

Jiqing Wang,Deshuang Shang,Huibing Mao,Jianguo Yu,Qiang Zhao,Pingxiong Yang,Huaizhong Xing

DOI: https://doi.org/10.1007/s00339-012-7289-4

2012-01-01

Abstract:Strain effects on a built-in electron-hole dipole moment are investigated in asymmetric In x Ga1−x As coupled quantum dots. We compute electron-hole separation as a function of alloy compositions for both electron and hole resonance cases. It is noted that the inclusion of strain enhances the built-in dipole moments and that the inverted electron-hole alignment is found for electron and hole resonances. Furthermore, the reversal of dipole moments gives rise to different asymmetric Stark shifts in each transition spectrum.
Influence of the Strain on the Energy Levels of Semiconductor Quantum Dots

Yang Hu,Zhongyuan Yu,Yumin Liu,Shiqi Zheng

IF: 2.56

2005-01-01

Chinese Optics Letters

Abstract:We systematically investigate a strain of self-assembled InAs/GaAs quantum dots (QDs) for the case of growth on a (001) substrate. The dependence of the biaxial and hydrostatic components of the strain on the quantum dot aspect ratio is studied using a finite element method. The dependence of the carrier's confining potentials is then calculated in the framework of eight-band kp theory. The shifts of the energy level in three shapes of QDs are investigated. By comparing the results, the influence of the strain on the QDs are given.
Effect of the Longitudinal and Transverse Stacking Period of Inas/Gaas Quantum Dots on the Distribution of Strain Field

Liu Yu-Min,Yu Zhong-Yuan,Yang Hong-Bo,Huang Yong-Zhen

DOI: https://doi.org/10.7498/aps.55.5023

IF: 0.906

2006-01-01

Acta Physica Sinica

Abstract:A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.
Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Mou Yang,S. J. Xu,Jian Wang

DOI: https://doi.org/10.1063/1.2841065

IF: 4

2008-01-01

Applied Physics Letters

Abstract:The strain distribution in single and double self-assembled InAs∕GaAs quantum dots is theoretically investigated by using a valence-force-field model. The results show strong influence of the capping conditions on the strain distribution in individual and stacked dots with wetting layers. In particular, the intermixing of atoms is incorporated into the strain calculations, leading to a conclusion that the atomic intermixing can notably modify the strain profiles near the interfaces of the stacked dot system.
Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Yumin Liu,Yuhong Liu,Zhongyuan Yu

DOI: https://doi.org/10.1117/12.636558

2005-01-01

Abstract:We systematically investigated the strain field distribution of conical-shaped InAs/GaAs self-organized quantum dot using the two-dimension axis-symmetry model. The normal strain, the hydrostatic and biaxial components along the center axis path of the quantum dots was analyzed. The dependence of these strain components on volume. height-over ratio and cap layer (covered by cap layer or uncovered quantum dot) are investigated for the quantum grown on the (00 1) substrate. The dependence of the carriers' confining potentials and electronic effective mass on the three circumstances discussed above is also calculated in the framework of eight-band k . p theory. The numerical results are in good agreements with the experiment data in published literature.
Wetting layers effect on InAs/GaAs quantum dots

Chao Sun,Pengfei Lü,Zhongyuan Yu,Huawei Cao,Lidong Zhang

DOI: https://doi.org/10.1016/j.physb.2012.07.039

2012-01-01

Abstract:FEM combining with the K·P theory is adopted to systematically investigate the effect of wetting layers on the strain-stress profiles and electronic structures of self-organized InAs quantum dot. Four different kinds of quantum dots are introduced at the same height and aspect ratio. We found that 0.5nm wetting layer is an appropriate thickness for InAs/GaAs quantum dots. Strain shift down about 3%∼4.5% for the cases with WL (0.5nm) and without WL in four shapes of quantum dots. For band edge energy, wetting layers expand the potential energy gap width. When WL thickness is more than 0.8nm, the band edge energy profiles cannot vary regularly. The electron energy is affected while for heavy hole this impact on the energy is limited. Wetting layers for the influence of the electronic structure is obviously than the heavy hole. Consequently, the electron probability density function spread from buffer to wetting layer while the center of hole's function moves from QDs internal to wetting layer when introduce WLs. When WLs thickness is larger than 0.8nm, the electronic structures of quantum dots have changed obviously. This will affect the instrument's performance which relies on the quantum dots' optical properties.
The Influences of Thickness of Spacing Layer and the Elastic Anisotropy on the Strain Fields and Band Edges of InAs/GaAs Conical Shaped Quantum Dots

Liu Yu-Min,Yu Zhong-Yuan,Ren Xiao-Min

DOI: https://doi.org/10.1088/1674-1056/18/1/003

2009-01-01

Chinese Physics B

Abstract:Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges (both conduction band and valence band) of the InAs/GaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.
Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

H. T. Johnson,L. B. Freund,C. D. Akyüz,A. Zaslavsky

DOI: https://doi.org/10.1063/1.368549

IF: 2.877

1998-10-01

Journal of Applied Physics

Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

physics, applied
Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

Jiqing Wang,Deshuang Shang,Huibing Mao,Jianguo Yu,Qiang Zhao,Pingxiong Yang,Huaizhong Xing

DOI: https://doi.org/10.1016/j.physb.2012.10.001

IF: 2.988

2012-01-01

Physica B Condensed Matter

Abstract:We investigate theoretically the strain effects on resonant properties in asymmetric InxGa1−xAs vertically stacked coupled quantum dots. The strain can modify the resonant electric field and the energy splitting between the bonding and antibonding molecular states of electrons (holes) in quantum dot molecules. The strain reduces resonant electric fields for both electron and hole resonance. However, it is found that molecular bonding is enhanced (suppressed) for electron (hole) resonance when considering the strain. The reversal of electron and hole bonding characters is attributed to different strain components acting on their respective energy bands. Such strain difference also leads to different composition dependence of resonant electric fields for each electron or hole resonance.
The Strain Relaxation of InAs/GaAs Self-Organized Quantum Dot

Liu Yu-Min,Yu Zhong-Yuan,Ren Xiao-Min

DOI: https://doi.org/10.1088/1674-1056/18/3/006

2009-01-01

Chinese Physics B

Abstract:This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters.Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis.It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume,as well as the dependence on both the aspect ratio and transverse period.The calculated results show that when the transverse period is larger than two times the base of the quantum dots,the influence of transverse periods can be ignored.The larger aspect ratio will lead more efficient strain relaxation.The larger angle between the faces and the substrate will lead more efficient strain relaxation.The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy,because the strain relaxation is the main driving force of the quantum dot’s self-organization.
The Strain Energy Density Distribution of the Capping Layer Surface for InAs/GaAs Quantum Dot along Different Growth Directions

Zhongyuan Yu,Yumin Liu

DOI: https://doi.org/10.1117/12.743706

2007-01-01

Abstract:In this paper, we calculated the strain distribution of low dimension structure using the elastic continuum model. The strain energy density distribution on the different thickness of capping layer surface for the self-organized InAs/GaAs quantum dots system is investigated by the numerical finite element method. The influence of the different growth directions on the strain energy density distributions can be found from the calculated results. The results can explain some experiment results, such as the ordering array of the quantum dots supper-lattices. So the growth direction and spacing thickness can be regarded as another control parameters for strain engineering self-organized semiconductor quantum materials. As a comparison, the strain distributions of other low-dimension self-organized materials are also calculated.
Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength

Liu Yu-Min,Yu Zhong-Yuan,Ren Xiao-Min

DOI: https://doi.org/10.1088/0256-307x/25/5/089

2008-01-01

Chinese Physics Letters

Abstract:A systematic investigation about the strain distributions around the InAs/GaAs quantum dots using the finite element method is presented. A special attention is paid to influence of an In0.2Ga0.8As strain reducing layer. The numerical results show that the horizontal- and vertical-strain components and the biaxial strain are reinforced in the InAs quantum dot due to the strain-reducing layer. However, the hydrostatic strain in the quantum dot is reduced. In the framework of eight-band k.p theory, we study the band edge modi. cations due to the presence of a strain reducing layer. The results demonstrate that the strain reducing layer yields the decreasing band gap, i.e., the redshift phenomenon is observed in experiments. Our calculated results show that degree of the redshift will increase with the increasing thickness of the strain-reducing layer. The calculated results can explain the experimental results in the literature, and further confirm that the long wavelength emission used for optical fibre communication is realizable by adjusting the dependent parameters. However, based on the calculated electronic and heavy-hole wave function distributions, we find that the intensity of photoluminescence will exhibits some variations with the increasing thickness of the strain-reducing layer.
Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots

Qiuji Zhao,Ting Mei,Daohua Zhang,Oka Kurniawan

DOI: https://doi.org/10.1007/s11082-011-9460-0

IF: 3

2011-01-01

Optical and Quantum Electronics

Abstract:We carry out a theoretical analysis of wetting layer effect on band-edge profiles and electronic structures of InAs/GaAs truncated-pyramid quantum dots, including the strain effect. A combination of an analytical strain model and an eight-band Fourier transform-based k · p method is adopted in the calculation. Strain modified band-edge profiles indicates that wetting layer widens the potential well inside the dot region. Wetting layer changes ground-state energy significantly whereas modifies probability density function only a little. The main acting region of wetting layer is just underneath the base of the dot. Wetting layer redistributes probability density functions of the lowest electron state and probability density functions of highest hole state differently because of the different action of quantum confinement on electrons and holes.
Investigation of the Elastic Strain Fields of Hetero-Epitaxial Self-Organized Quantum Dots

Liu Yumin,Yu Zhongyuan,Yang Hongbo,Huang Yongzhen

DOI: https://doi.org/10.3321/j.issn:1002-0470.2006.01.001

2005-01-01

Journal of Functional Biomaterials

Abstract:A systemic analysis about the elastic strain fields of tow-dimension lens shaped quantum dots is given in the finite element method by the ANSYS tool.In our analysis,three circumstances such as isolated quantum dot,multi-quantum dot and superlattice quantum dot systems are considered.Results showed the long-rang elastic fields of the substrate between the quantum dots would influence the strain fields of the materials in and around the quantum dot.So,in calculation the electronic structure of the multi quantum dots,the strain influences must be considered as a whole.
The Influence of Strain-Reducing Layer on Strain Distribution and Ground State Energy Levels of GaN/A1N Quantum Dot

Liu Yu-Min,Yu Zhong-Yuan,Ren Xiao-Min,Xu Zi-Huan

DOI: https://doi.org/10.1088/1674-1056/18/10/012

2009-01-01

Chinese Physics B

Abstract:This article deals with the strain distributions around GaN/A1N quantum dots by using the finite element method. Special attention is paid to the influence of Al0.2Ga0.8N strain-reducing layer on strain distribution and electronic structure. The numerical results show that the horizontal and the vertical strain components are reinforced in the GaN quantum dot due to the presence of the strain-reducing layer, but the hydrostatic strain in the quantum dot is not influenced. According to the deformation potential theory, we study the band edge modifications and the piezoelectric effects. The result demonstrates that with the increase of the strain reducing layer, the transition energy between the ground state electron and the heavy hole increases. This result is consistent with the emission wavelength blue shift phenomenon observed in the experiment and confirms that the wavelength shifts toward the short wavelength range is realizable by adjusting the structure-dependent parameters of GaN/A1N quantum dot.
Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Hongtao Jiang,Jasprit Singh

DOI: https://doi.org/10.1103/PhysRevB.56.4696

IF: 3.7

1997-01-01

Physical Review B

Abstract:Strained epitaxy has been shown to produce pyramidal-shaped quantum dot structures by single-step epitaxy. In this paper we examine the strain tensor in these quantum dots using a valence force field model. We use an eight-band k.p formalism to find the electronic spectra in the highly strained dots. Results obtained for the conduction-band spectra using the effective-mass approach are shown to have serious errors. This is particularly true for excited states in the conduction band. The dependence of the electronic spectra on the quantum dot size and shape is also reported alone with comparisons with published experimental results.
The Electronic Structure of Truncated-Conical Shaped InAs/GaAs Quantum Dot with Wetting Layers

Yumin Liu,Zhongyuan Yu,Xiaomin Ren

DOI: https://doi.org/10.1115/mnc2007-21539

2007-01-01

Abstract:Semiconductor quantum dots have been of major interest in recent years. This has largely been simulated by progress in quantum dot growth technology, whereby self-organized quantum dots array can be achieved using Stranski-Krastanow growth mode. Quantum does material has achieved broad applications in optoelectronic devices and quantum information fields because of the unique 3-D electron confinement. Based on the 1-band effective-mass theory, a finite element technique is developed to calculate the electronic structure of conical shaped InAs/GaAs quantum dot, including the wetting layer. Using the axis-symmetry model, the 3-D effective-mass Schro¨dinger equation with step potential barrier can be reduced to a 2-D problem by separating variable, which greatly reduced the calculation cost. Based on the result, we found, compared without wetting layer, the wetting layer can influence the electron level. This may attribute to the increase of the confining potential width rather than the potential height. The presented finite element code can be further used to analysis the transverse or vertical coupled quantum dot molecule.

The Influence Of Strain On Electronic Structure Of Inas/Gaas Quantum Dot With Wetting Layer

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

The Elastic Strain Field Distribution of Inas/Gaas Self-Organized Periodical Quantum Dots' Array

Influence of Strain on Built-in Dipole Moment in Asymmetric in X Ga1−x As Quantum Dot Molecules

Influence of the Strain on the Energy Levels of Semiconductor Quantum Dots

Effect of the Longitudinal and Transverse Stacking Period of Inas/Gaas Quantum Dots on the Distribution of Strain Field

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Wetting layers effect on InAs/GaAs quantum dots

The Influences of Thickness of Spacing Layer and the Elastic Anisotropy on the Strain Fields and Band Edges of InAs/GaAs Conical Shaped Quantum Dots

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

The Strain Relaxation of InAs/GaAs Self-Organized Quantum Dot

The Strain Energy Density Distribution of the Capping Layer Surface for InAs/GaAs Quantum Dot along Different Growth Directions

Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength

Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots

Investigation of the Elastic Strain Fields of Hetero-Epitaxial Self-Organized Quantum Dots

The Influence of Strain-Reducing Layer on Strain Distribution and Ground State Energy Levels of GaN/A1N Quantum Dot

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

The Electronic Structure of Truncated-Conical Shaped InAs/GaAs Quantum Dot with Wetting Layers