Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Influence of Strain on Built-in Dipole Moment in Asymmetric in X Ga1−x As Quantum Dot Molecules

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

Influences of Strain on Binding Energies of Excitons in InAs/GaAs Quantum Dot Molecules

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

The Influence Of Strain On Electronic Structure Of Inas/Gaas Quantum Dot With Wetting Layer

Influence of the Strain on the Energy Levels of Semiconductor Quantum Dots

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Effect of the Longitudinal and Transverse Stacking Period of Inas/Gaas Quantum Dots on the Distribution of Strain Field

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Strain Induced Quantum Effect in Semiconductors

Influence of Strain on Hydrogenic Impurity States in a GaN/Al X Ga1−x N Quantum Dot

Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Single InAs/GaAs Self-Assembled Quantum Dots

Impact of GaNAs Strain Compensation Layer on the Electronic Structure of InAs/GaAs Quantum Dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Strain accumulation in InAs/In x Ga 1− x As quantum dots

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots