Abstract:Strain-free GaAs cone-shell quantum dots have a unique shape, which allows a wide tunability of the charge-carrier probability densities by external electric and magnetic fields. Here, the influence of a lateral electric field on the optical emission is studied experimentally using simulations. The simulations predict that the electron and hole form a lateral dipole when subjected to a lateral electric field. To evaluate this prediction experimentally, we integrate the dots in a lateral gate geometry and measure the Stark-shift of the exciton energy, the exciton intensity, the radiative lifetime, and the fine-structure splitting (FSS) using single-dot photoluminescence spectroscopy. The respective gate voltage dependencies show nontrivial trends with three pronounced regimes. We assume that the respective dominant processes are charge-carrier deformation at a low gate voltage U, a vertical charge-carrier shift at medium U, and a lateral charge-carrier polarization at high U. The lateral polarization forms a dipole, which can either enhance or compensate the intrinsic FSS induced by the QD shape anisotropy, dependent on the in-plane orientation of the electric field. Furthermore, the data show that the biexciton peak can be suppressed by a lateral gate voltage, and we assume the presence of an additional vertical electric field induced by surface charges.

Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Single InAs/GaAs Self-Assembled Quantum Dots

2D–3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots

Asymmetric Stark shifts of exciton in InAsGaAs pyramidal quantum dots

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots

Electric field induced tuning of electronic correlation in weakly confining quantum dots

Anomalous Quantum-Confined Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots.

Scattered Light Models of Protostellar Envelopes: Multiple Outflow Cavities and Misaligned Circumstellar Disks

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Anomalous Quantum Confined Stark Effects In Vertically Coupled Inas/Gaas Self-Assembled Quantum Dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

GaAs Cone-Shell Quantum Dots in a Lateral Electric Field: Exciton Stark-Shift, Lifetime, and Fine-Structure Splitting

Enhanced Intraband Transitions with Strong Electric Field Asymmetry in Stacked InAs/GaAs Self-Assembled Quantum Dots

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Electrong-factor Distribution in Self-Assembled Quantum Dots

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study