Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Strain Distributions and Electronic Structure of Three-Dimensional InAs/GaAs Quantum Rings

Strain Distribution and Electronic Structures of the InAs/GaAs Quantum Ring Molecule in an Applied Electric Field

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Valence Band Structures Of Inas/Gaas Quantum Rings Using The Fourier Transform Method

The Strain Distributions and Carrier'S Confining Potentials of Self-Organized Inas/Gaas Quantum Dot

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

The Elastic Strain Field Distribution of Inas/Gaas Self-Organized Periodical Quantum Dots' Array

Self-organized GaN/A1N Hexagonal Quantum-Dots: Strain Distribution and Electronic Structure

Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

The Strain Energy Density Distribution of the Capping Layer Surface for InAs/GaAs Quantum Dot along Different Growth Directions

The Calculation for Strain Distributions and Electronic Structure of InAs/GaAs Quantum Dots Based on the Eight-Band K·p Theory

The Calculation of Strain Distribution in Quantum Dots with Green Method

Influence of the Strain on the Energy Levels of Semiconductor Quantum Dots

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Electronic Structure of Inasxp1-X/Inp Strained Quantum Wires

Calculation of Critical Size of Coherent InAs Quantum Dot on GaAs Substrate

The Influences of Thickness of Spacing Layer and the Elastic Anisotropy on the Strain Fields and Band Edges of InAs/GaAs Conical Shaped Quantum Dots