Abstract:The effects of alloying C with Ge and Si and varying the C/Ge ratio during the growth of very thin layers of the ternary alloy SiGeC grown on Si (100) substrates and the resulting strain modification on self-assembled and self-organized quantum dots are examined. During coherent islanded growth, where dislocations are not formed yet to relieve the strain, higher strain energy produced by greater lattice mismatch acts to reduce the island size, increase the density of islands, and significantly narrow the distribution of island sizes to nearly uniformly sized quantum dots. Strain energy can also control the critical thickness for dislocation generation within the three-dimensional islands, which then limits the maximum height which coherent islands can achieve. After the islands relax by misfit dislocations, the island sizes increase and the island size distribution becomes broader with the increase of misfit and strain. The optimal growth for a high density of uniform coherent islands occurred for the Si0.49Ge0.48C0.03 alloy composition grown on (100) Si, at a growth temperature of 600 °C, with an average thickness of 5 nm, resulting in a narrow size distribution (about 42 nm diameter) and high density (about 2×1010 dots/cm2) of quantum dots.

The Equilibrium Composition in Ge X Si 1 - X /si Self-Assembled Alloy Quantum Dot

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Electronic Structures of Alloy Quantum Dots with Nonuniform Composition

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Research of Equilibrium Composition Map in Conic Quantum Dots

Equilibrium compositional distribution in freestanding ternary semiconductor quantum dots: the case of In(x)Ga(1-x)As

The elastic relaxation energy and equilibrium aspect ratio of self-organized pyramidal quantum dot

Strain Modification in Thin Si1−x−yGexCy Alloys on (100) Si for Formation of High Density and Uniformly Sized Quantum Dots

Optical properties of Ge/Si quantum dot superlattices

Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode.

The External Crystal Structure and Electronic Structure are Simulated about Ge<sub>0.6</sub>Si<sub>0.4</sub> Quantum Dots

The External Crystal Structure and Electronic Structure Are Simulated about Ge<sub>0.6</sub>Si<sub>0.4</sub> Quantum Dots

Effect of Elemental Composition and Size on Electron Confinement in Self-Assembled SiC Quantum Dots : a Combinatorial Approach

Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

Shape-dependent composition profile in epitaxial alloy quantum dots: A phase-field simulation

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Strain Distribution of Ge/Si Quantum Dots in Array