Abstract:Mn0.05Ge0.95 quantum dots (QDs) samples were grown by molecular beam epitaxy on Si substrates and 15-nm-thick fully strained Si0.8Ge0.2 virtual substrates, respectively. The QDs samples grown on the Si0.8Ge0.2 virtual substrates show a significant ferromagnetism with a Curie temperature of 227 K, while the QDs samples grown on the Si substrates are non-ferromagnetic. Microstructures of the QDs samples were characterized by high resolution transmission electron microscopy and synchrotron radiation X-ray diffraction. Interdependence between microstructure and ferromagnetism of Mn-doped Ge QDs was investigated. For the QDs sample grown on the strained Si0.8Ge0.2 virtual substrate, although the ferromagnetic phase Mn5Ge3 clusters were found to be formed in small dome-shaped dots, the significant ferromagnetism observed in that sample is attributed to ferromagnetic phase Mn-doped large dome-shaped Ge QDs, rather than to the ferromagnetic phase Mn5Ge3 clusters. The fully strained Si0.8Ge0.2 virtual substrates would result in a residual strain into the QDs and an increase in Ge composition in the QDs. Both consequences favor the formations of ferromagnetic phase Mn-doped Ge QDs from points of view of quantum confinement effect as well as Mn doping at substitutional sites.

Electronic Structures of Alloy Quantum Dots with Nonuniform Composition

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

The Equilibrium Composition in Ge X Si 1 - X /si Self-Assembled Alloy Quantum Dot

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode.

The External Crystal Structure and Electronic Structure Are Simulated about Ge<sub>0.6</sub>Si<sub>0.4</sub> Quantum Dots

The External Crystal Structure and Electronic Structure are Simulated about Ge<sub>0.6</sub>Si<sub>0.4</sub> Quantum Dots

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Shape-dependent composition profile in epitaxial alloy quantum dots: A phase-field simulation

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Calculations on Electronic States in QDs with Saturated Shapes

Compatible Composition Profiles and Critical Sizes of Alloyed Quantum Dots

The Effect of Near Laterally and Vertically Neighboring Quantum Dots on the Composition of Uncapped InxGa1−xAs/GaAs Quantum Dots

Electronic and Optical Properties of InGaAs/GaAs Quantum Dots with Tunable Aspect-Ratio

Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

Research Update: Strain and Composition Effects on Ferromagnetism of Mn0.05Ge0.95 Quantum Dots

Equilibrium compositional distribution in freestanding ternary semiconductor quantum dots: the case of In(x)Ga(1-x)As

Asymmetry of Hole States in Vertically Coupled Ge Double Quantum Dot

Effective-Mass Theory for Hierarchical Self-Assembly of Gaas/Alxga1-Xas Quantum Dots

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.