Abstract:Semiconductor quantum dots have been of major interest in recent years. This has largely been simulated by progress in quantum dot growth technology, whereby self-organized quantum dots array can be fabricated by MBE and MOCVD facilities using Stranski Krastanow growth mode. Quantum does material has achieved broad applications in optoelectronic devices and quantum information fields because of the unique 31) electron confinement. However, a good understanding about the electronic, excitonic and optoelectronics properties of the quantum materials are very important in fabrication nanostructure devices based on quantum dots. Based on the 1-band effective-mass theory, a finite element numerical technique is developed to calculate the electronic structure of truncated conical shaped InAs GaAs vertical aligned quantum dot molecular, including the wetting layer. Using the axis-symmetry model, the 31) effective-mass Schrodinger equation with step potential barrier can be reduced to a 2D problem by separating variable technique, which greatly reduced the calculation cost. Form the calculated results, we found that the coupling effects is obviously when the separation distance is in the range of the less than 10nm. The wave functions will exhibits large probability in the region between the quantum dots. In order to consider the effect of the distance between the two layers of quantum dots on the electronic state coupling, we calculated the results when the distance is 6nm, 11nm, 14nm and 17nm. The ground state, the second excited and the highest excited state will lower its energy with decreasing the distance between the quantum dots, but the second excited state will increase its energy. With increasing the distance between the two quantum dots, the coupling effect will become weaker, and for the ground state, the wave function distribution will tend to localized only in one of the quantum dot, the energy become something degenerate. The calculated results show that the ground state and the first excited state are degenerate. With decreasing of the distance, the degenerate states are broken, and the energy levels are separated. In our simulations, the strain effects are ignored. In the future woks, strain should be taken in to account as an easy way. The calculated results can help us to examine optoelectronic properties of the semiconductor nanostructure based on multi sheet of quantum dots with wetting layers.

Asymmetry of Hole States in Vertically Coupled Ge Double Quantum Dot

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells

Vertically coupled double quantum dots without tunnelling

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Spin States of Holes in Ge/Si Nanowire Quantum Dots.

Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot

Spectral Properties Of A Double-Quantum-Dot Structure: A Causal Green'S Function Approach

Ground-State Properties of an Artificial Molecule: a Simple Model Calculation for the Double Quantum Dot

Two-Hole Ground State: Dichotomy in Pairing Symmetry

Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells

Transition Energies of Vertically Coupled Multilayer Nanoscale InAs/GaAs Semiconductor Quantum Dots of Different Shapes

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Interacting holes in gated WSe$_2$ quantum dots

The Couple Electronic State of the Stack Quantum Dots by Axial Symmetrical Finite Element Analysis

Energy Spectra of Three Electrons in Si/SiGe Single and Vertically Coupled Double Quantum Dots

Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes

Coupled vertical double quantum dots at single-hole occupancy

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes