Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

E.E. Vdovin,Yu.N. Khanin,O. Makarovsky,A. Patane,L. Eaves,M. Henini,C.J. Mellor,K.A. Benedict,R. Airey
DOI: https://doi.org/10.48550/arXiv.cond-mat/0703614
2007-03-23
Abstract:We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.
Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
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