Abstract:We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of an external magnetic field on the electron resonant tunneling current through self - assembled InAs quantum dots (QDs) under low - temperature conditions (≤2 K), especially when the magnetic field direction is parallel or perpendicular to the current - flowing direction. Specifically, the authors focus on: 1. **Influence of magnetic field on tunneling current**: The change in tunneling current when the magnetic field \( \mathbf{B} \) is parallel or perpendicular to the current direction \( \mathbf{J} \). 2. **Angular anisotropy**: The strong angular anisotropy phenomenon of the enhanced current observed when the magnetic field \( \mathbf{B} \) rotates in the plane of the quantum - dot layer. 3. **Fermi - edge singularity (FES)**: The manifestation of FES under different temperature and magnetic field conditions and its relationship with the symmetry of the quantum - dot wave function. 4. **Influence of many - body interactions**: The paper explores how electron - electron interactions in quantum dots affect the tunneling current and explains the manifestation of such interactions in quantum - dot wave functions with low symmetry. ### Main research content - **Experimental setup**: A tunnel diode structure containing a single - layer self - assembled InAs quantum dots was grown on a GaAs substrate using molecular beam epitaxy technology. The current - voltage characteristics \( I(V) \) were measured under different temperature and magnetic field conditions. - **Observation results**: - At a low temperature (0.4 K), when the magnetic field \( \mathbf{B} \) is parallel to the current \( \mathbf{J} \), the tunneling current is significantly enhanced and exhibits a power - law singular behavior \( I \sim (V - V_0)^{-\gamma} \), where \( \gamma \approx 0.84 \). - When the magnetic field \( \mathbf{B} \) is perpendicular to the current \( \mathbf{J} \), the tunneling current also shows a similar enhancement, but \( \gamma \approx 0.77 \). - A strong angular anisotropy of the tunneling current was observed, especially when the magnetic field is along the \( \langle 110 \rangle \) crystal - axis direction, the FES enhancement is the most significant. - **Theoretical explanation**: - These phenomena are attributed to the low symmetry of the quantum - dot wave function and the influence of electron - electron interactions. - At low temperatures, the FES effect is significantly enhanced, indicating that many - body interactions play an important role in the tunneling process. ### Conclusion This study reveals the significant influence of an external magnetic field on the electron tunneling current through self - assembled InAs quantum dots, especially under low - temperature conditions, the tunneling - current enhancement and angular anisotropy phenomena caused by the magnetic field. These results provide new insights into understanding many - body interactions and electron tunneling in quantum dots and are helpful for further exploring the physical mechanisms in quantum - dot systems.

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