Abstract:We propose a novel approach to explore the properties of a quantum dot in the presence of the spin-orbit interaction and in a tilted magnetic field. The spin-orbit coupling within the quantum dot manifest itself as anti-crossing of the energy levels when the tilt angle is varied. The anti-crossing gap has a non-monotonic dependence on the magnitude of the magnetic field and exhibits a peak at some finite values of the magnetic field. From the dependence of the tunneling current through the quantum dot on the bias voltage and the tilt angle, the anti-crossing gap and most importantly the spin-orbit strength can be uniquely determined.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to propose a new method for measuring the spin - orbit coupling strength by studying the spin - orbit coupling effect in the quantum dot system in a tilted magnetic field. Specifically, the authors focus on how to determine the strength of spin - orbit coupling by analyzing the behavior of quantum dot energy levels at different tilt angles, especially in the energy - level anti - crossing phenomenon. ### Main problems and solutions 1. **Influence of spin - orbit coupling (SO)**: - Spin - orbit coupling plays a crucial role in semiconductor nanostructures because it can couple the electron spin with its orbital motion. - Previous studies mainly relied on methods such as Shubnikov - de Haas oscillations to determine the spin - orbit coupling strength, but these methods do not always provide clear results. 2. **Proposal of a new method**: - The authors proposed a new theoretical method based on the behavior of quantum dot energy levels in a tilted magnetic field. - The tilted magnetic field can not only introduce Zeeman splitting but also change the orbital motion of electrons within the quantum dot, thereby affecting the energy - level structure. 3. **Experimental verification means**: - By measuring the tunneling current through the quantum dot and studying its variation with the bias voltage and the tilt angle. - The tunneling current shows a unique dependence in the energy - level anti - crossing region, which can be used to determine the anti - crossing energy gap and then infer the spin - orbit coupling strength. ### Formula representation The Hamiltonian mentioned in the paper is: \[ H = \frac{1}{2m^*} \left( \mathbf{p} + \frac{e}{c} \mathbf{A} \right)^2 + \frac{1}{2} m^* \omega_0^2 r^2 + \frac{1}{2} g \mu_B B_z \sigma_z + \frac{\alpha}{\hbar} \left[ \boldsymbol{\sigma} \times \left( \mathbf{p} + \frac{e}{c} \mathbf{A} \right) \right]_z + \frac{1}{2} g \mu_B B_x \sigma_x \] where: - \( \mathbf{A} = \frac{1}{2} B_z (-y, x, 0) \) is the vector potential in the symmetric gauge, - \( \alpha \) is the spin - orbit coupling strength, - \( g \) is the effective Landé g - factor, - \( \mathbf{p} \) is the momentum vector in the two - dimensional plane. ### Conclusion Through the analysis of the tunneling current, the authors demonstrated how to use the energy - level anti - crossing phenomenon to accurately measure the spin - orbit coupling strength. This method not only provides a more accurate measurement means but also lays the foundation for further research on the spin - orbit coupling effect in quantum dots.

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