Abstract:Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we consider a quantum dot side coupled to a quantum wire taking into account the spin dependent electron tunneling from the wire to the dot. Using the nonequilibrium Green's functions, we show that the many body correlations between the quantum dot and the quantum wire can increase the current induced spin accumulation at low temperatures by almost two orders of magnitude for the moderate system parameters. The enhancement is related to the Kondo peak formation in the density of states and the spin instability due to the strong Coulomb interaction. This effect may be useful to electrically manipulate the localized electron spins in quantum dots for their quantum applications.

What problem does this paper attempt to address?

### What problem does this paper attempt to solve? This paper aims to solve the problem of how to significantly enhance the current - induced spin accumulation in semiconductor nanostructures. Specifically, the author explores the method of using the Kondo effect to greatly increase the degree of spin polarization in Quantum Dots (QD). #### Background and Challenges 1. **Weak Spin - Orbit Coupling**: In semiconductor nanostructures, due to the influence of weak spin - orbit coupling, the current - induced spin accumulation is usually very limited. 2. **Electrical Single - Spin Polarization**: In the development of quantum technology, especially when using the localized electron spin in quantum dots as qubits, achieving electrical single - spin polarization without a magnetic field has always been a difficult problem. #### Proposed Solutions The author proposes a method based on the Kondo effect to enhance the current - induced spin accumulation through many - body correlations. The specific methods are as follows: - **Model System**: A quantum dot laterally coupled to a quantum wire is studied. This structure allows spin - dependent tunneling processes, resulting in spin accumulation in the quantum dot. - **Kondo Effect**: By introducing strong Coulomb interactions, the Kondo effect is formed, which can significantly increase the degree of spin polarization at low temperatures. The Kondo effect is manifested as the Kondo peak in the density of states and spin instability, increasing the spin polarization degree by nearly two orders of magnitude. - **Theoretical Framework**: Non - equilibrium Green’s functions are used to describe the many - body interactions of the system and calculate the spin polarization degree under different bias voltages and temperatures. #### Main Results 1. **Enhancement of Spin Polarization Degree**: Through the Kondo effect, the spin polarization degree can be significantly enhanced at lower temperatures, especially when the bias voltage is small. 2. **Temperature Dependence**: The spin polarization degree shows a strong temperature dependence at low temperatures. As the temperature decreases, the spin polarization degree increases significantly. 3. **Importance of Many - Body Correlations**: The research shows that many - body correlations play a key role in enhancing the spin polarization degree. Especially in the completely chiral quasi - bound state, the spin polarization degree can be close to 100%. ### Summary This paper shows how to use the Kondo effect to significantly enhance the current - induced spin accumulation in quantum dots, thus providing a new way to achieve efficient electrical single - spin polarization. This result is of great significance for fields such as quantum information processing and quantum computing.

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