Abstract:We present a theoretical study of low temperature nonequilibrium transport through an interacting quantum dot in the presence of Zeeman magnetic field and current injection into one of its leads. By using a self-consistent renormalized equation of motion approach, we show that the injection of a spin-polarized current leads to a modulation of the Zeeman splitting of the Kondo peak in the differential conductance. We find that an appropriate amount of spin accumulation in the lead can restore the Kondo peak by compensating the splitting due to magnetic field. By contrast when the injected current is spin-unpolarized, we establish that both Zeeman-split Kondo peaks are equally shifted and the splitting remains unchanged. Our results quantitatively explain the experimental findings reported in KOBAYASHI T. et al., Phys. Rev. Lett. 104, 036804 (2010). These features could be nicely exploited for the control and manipulation of spin in nanoelectronic and spintronic devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the influence of spin accumulation and an external magnetic field on the Kondo effect in the Quantum Dot (QD) system under low - temperature conditions. Specifically, the author studied how the non - equilibrium transport characteristics of quantum dots change when an external Zeeman magnetic field is applied and a current is injected into one of the electrodes. By using the self - consistent renormalized equation - of - motion method, the author showed that injecting a spin - polarized current can modulate the Zeeman splitting of the Kondo peak in the differential conductance, and an appropriate amount of spin accumulation can restore the Kondo peak and compensate for the splitting caused by the magnetic field. ### Background and Problem Description of the Paper 1. **Kondo Effect**: When a quantum dot has an odd number of electrons, it will exhibit the Kondo effect at low temperatures, that is, the local spin is screened by the conduction electrons to form a Kondo singlet. 2. **Experimental Phenomenon**: It has been experimentally observed that when a Zeeman magnetic field is applied, the Kondo peak will split in the differential conductance, and the splitting value is approximately \(2\Delta / e\), where \(\Delta=|g^*\mu_B B|\) is the energy of Zeeman splitting. 3. **Influence of Spin Accumulation**: When a spin - polarized current is injected, spin accumulation can compensate for the Kondo peak splitting caused by the magnetic field to a certain extent, thus restoring the Kondo peak; while injecting a non - spin - polarized current will cause the two split peaks to move by the same amount, but will not change the distance between them. ### Research Objectives - **Theoretical Explanation**: Explain the phenomena observed in the experiment through a theoretical model, especially the influence of spin accumulation on the Kondo peak. - **Control and Manipulation**: Explore the possibility of using spin accumulation to control and manipulate nano - electronic and spintronic devices. ### Main Findings 1. **Spin - Polarized Current**: Injecting a spin - polarized current will cause the separation of the Kondo peak in the differential conductance to decrease linearly with the injection voltage \(V_E\) until it completely disappears at a critical value, at which point the Kondo peak is restored. 2. **Non - Spin - Polarized Current**: Injecting a non - spin - polarized current will cause the two Kondo peaks to move by the same amount, but the distance between them remains unchanged. 3. **Theoretical Model**: Through the single - impurity Anderson model and the self - consistent renormalized equation - of - motion method, the author was able to quantitatively explain the experimental results and predict the Kondo peak behavior under different conditions. ### Conclusion This paper has theoretically proven the important influence of spin accumulation on the Kondo effect under an external magnetic field, providing new ideas and methods for the future design and optimization of quantum - dot - based nano - electronic and spintronic devices.

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