Abstract:Based on the group velocity concept and the two-band model, we investigated tunneling properties of spin-polarized electrons traversing ferromagnetic/insulator (semiconductor) double junctions under the influence of an external electric field. The tunneling time and the transmission coefficient, as well as the spin polarization, were calculated and examined. Effects of the electric field and quantum size are also considered. The results indicate that the tunneling time strongly depends on the spin orientation of tunneling electrons. In a wide range of incident energy, spin-down electrons spend a longer time tunneling through the structure than spin-up ones, and the difference of the tunneling time Δτ between electrons with opposite spin orientation is very sensitive to the incident energy in the lower energy region. Moreover, the variation of Δτ with the increasing of the incident energy shows pronounced oscillations for certain applied bias and structural size. The results also indicate that spin polarization shows frequent wide-range oscillations and its magnitude decays slowly with the increasing of the incident energy, which reveal that the spin polarization in ferromagnetic/insulator (semiconductor) junctions possesses quite different properties from those exhibited in semiconductor electric-barrier or magnetic-barrier structures as well as semiconductor/semimagnetic semiconductor hybrid heterostructures.

Spin-polarized Tunneling Through a Diluted Magnetic Semiconductor Quantum Dot

Spin Polarized Tunneling Through Diluted Magnetic Semiconductor Barriers

Spin-bias-induced Transport Through a Quantum Dot Coupled to a Ferromagnetic Lead

Spin-Polarized Ballistic Transport In Diluted Magnetic Semiconductor Quantum Wire Systems

Spin-Orbit Coupling and Tunneling Current in a Parabolic Quantum Dot

Spin-polarized Transport of Two-Dimensional Electron Gas Embedded in a Diluted Magnetic Semiconductor

Oscillating Magnetoresistance In Diluted Magnetic Semiconductor Barrier Structures

Spin-Polarized Electron Tunneling Through A Quantum Dot

Photon-Assisted Spin-Dependent Tunneling in a Magnetic-Field Tunable Diluted Magnetic Semiconductor Structure with a Nonmagnetic Barrier

Current and spin torque in a ferromagnet-quantum dot-ferromagnet tunneling system: quantum rate equations

Spin Filtering Through Multi- -Magnetic-barrier Structures

Spin-Polarized Transport in A Lateral Two-Dimensional Diluted Magnetic Semiconductor Electron Gas

Spin-flip process through a quantum dot coupled to ferromagnetic electrodes

Tunneling transport of two-dimensional spin-electrons through magnetic quantum structures

Angle-dependent Tunneling Through Quantum Dots Coupled to Noncollinearly Oriented Magnetic Leads and Subject to Magnetic Fields

Spin Transport Properties of a Quantum Dot Coupled to Ferromagnetic Leads with Noncollinear Magnetizations

Spin-valley dynamics of electrically driven ambipolar carbon-nanotube quantum dots

Magnetic Field Effects on Quantum-Dot Spin Valves

Electron and Hole States in Diluted Magnetic Semiconductor Quantum Dots

Transient Charging and Discharging of Spin-polarized Electrons in a Quantum Dot

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field