Abstract:We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.

Oscillating Magnetoresistance In Diluted Magnetic Semiconductor Barrier Structures

Spin Polarized Tunneling Through Diluted Magnetic Semiconductor Barriers

Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Spin-Polarized Ballistic Transport In Diluted Magnetic Semiconductor Quantum Wire Systems

Spin-polarized Tunneling Through a Diluted Magnetic Semiconductor Quantum Dot

Nonequilibrium Spin Accumulation and Tunneling Magnetoresistance in a Ferromagnet/semiconductor/ferromagnet Double Tunnel Junction

Photon-Assisted Spin-Dependent Tunneling in a Magnetic-Field Tunable Diluted Magnetic Semiconductor Structure with a Nonmagnetic Barrier

Spin Filtering Through Multi- -Magnetic-barrier Structures

Spin Filtering in the Double-Barrier Structure

Theory for Tunnel Magnetoresistance Oscillation

Magnetoresistance Effect of Double-Barrier Magnetic Tunneling Junction Applied in Spin Transistors

Spin-polarized Transport of Two-Dimensional Electron Gas Embedded in a Diluted Magnetic Semiconductor

Oscillatory Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions

Longitudinal Spin Transport In Diluted Magnetic Semiconductor Superlattices: The Effect Of The Giant Zeeman Splitting

Spin-Dependent Transport Through Cd1-Xmnxte Diluted Magnetic Semiconductor Quantum Dots

Analytical Result of the Effect of Spin Scattering and Impurity-Assistance on Magnetoresistance in Doped Magnetic Tunneling Junctions

Current and Spin-Filtering Dual Diodes Based on Diluted Magnetic Semiconductor Heterostructures with A Nonmagnetic Barrier

unneling Barrier Thickness Dependence of Spin Polarization of Ferromagnet in Magnetic Tunnel Junctions

Spin-Polarized Transport in A Lateral Two-Dimensional Diluted Magnetic Semiconductor Electron Gas

Spin filtering and spin separation in diluted magnetic semiconductor hybrid systems

Spin-Resonant Suppression And Enhancement In Znse/Zn1-Xmnxse Multilayer Heterostructures