Abstract:In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes according to the electric field and Fermi energy were investigated. The higher electric field, the stronger spin injection efficiency, and its velocity of increase gets lower and approaches to the equilibrium state. Additionally, the higher interface conductivity, the weaker spin injection efficiency, and the transmission due to Fermi energy of spin up and spin down is different from each other. In the same structure, the spin injection efficiency changes depending on the magnetic field, and the spin injection efficiency vibrates sensitively according to the magnetic field. In TI / DMS heterogeneous structure, the spin current changes according to magnetic field were investigated. Here, when the magnetic field is low, the spin current oscillates, and as the magnetic field increases, the vibration is attenuated. It also decreases with increasing temperature and weakens vibrations. This is due to the competitive effect of the chiral properties of Dirac type quasiparticles in the topological insulator and the unique properties of exchange interaction between electrons and ions in DMS. This result allows us to expect the possibility of spintronic devices with high sensitivity to magnetic field.

Spin-Dependent Transport Through Cd1-Xmnxte Diluted Magnetic Semiconductor Quantum Dots

Spin-flip process through a quantum dot coupled to ferromagnetic electrodes

Electron and Hole States in Diluted Magnetic Semiconductor Quantum Dots

Spin States in Semiconductor Quantum Dot with A Single Magnetic Ion

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Magnetic Field Effects on Quantum-Dot Spin Valves

Spin-Dependent Transport in Diluted-Magnetic-Semiconductor/Semiconductor Quantum Wires

Spin-Polarized Transport and Spin Seebeck Effect in Triple Quantum Dots with Spin-Dependent Interdot Couplings

Spin-polarized Transport Through the T-shaped Double Quantum Dots

Magnetic MnxGe1-x Dots for Spintronics Applications

Mesoscopic Spin-Flip Transport Through A Hybrid System with A Single Molecular Dot System Applied with Ac Magnetic Fields

Spin-dependent Thermoelectronic Transport of a Single Molecule Magnet Mn(dmit)2.

Spin-Dependent Thermoelectric Transport Through Double Quantum Dots

Spin-Dependent Transport Through an Interacting Quantum Dot System

Controllable Spin-Polarization of Electronic Transport Through A Magnetic Quantum Dot in the Influence of Microwave Field

Spin Transport in the heterogeneous structure containing Topological Insulator and Diluted Magnetic Semiconductor

Thermally Driven Pure Spin Current Through an Interacting Quantum Dot

Photon-Assisted Spin-Dependent Tunneling in a Magnetic-Field Tunable Diluted Magnetic Semiconductor Structure with a Nonmagnetic Barrier

Spin-Dependent Inelastic Transport Through Single-Molecule Junctions with Ferromagnetic Electrodes

Spin Filtering Through Magnetic-Field-Modulated Double Quantum Dot Structures

Spin-polarization-dependent quantum transport through a quantum-dot array