Abstract:Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics. However, the core process of the electron symmetry filtering breaks down under applied bias, dramatically reducing the TMR above 0.5 V. This strongly hampers the application range of MTJs. To circumvent the problem, resonant tunneling between ferromagnetic electrodes through quantum well states in thin layers has been used so far. This mechanism, however, is mainly effective at low temperatures. Here, a fundamentally different approach is demonstrated, providing a strong TMR boost under applied bias in V/MgO/Fe/MgO/Fe/Co hybrids. This pathway uses spin orbit coupling (SOC) controlled interfacial states in vanadium, which contrary to the V(001) bulk states are allowed to tunnel to Fe(001) at low biases. The experimentally observed strong increase of TMR with bias is modelled using two nonlinear resistances in series, with the low bias conductance of the first (V/MgO/Fe) element being boosted by the SOC-controlled interfacial states, while the conductance of the second (Fe/MgO/Fe) junctions controlled by the relative alignment of the two ferromagnetic layers. These results pave a way to unexplored and fundamentally different spintronic device schemes, with tunneling magnetoresistance uplifted under applied electric bias.

Oscillatory Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions

Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Magnetoresistance Effect of Double-Barrier Magnetic Tunneling Junction Applied in Spin Transistors

Bias Voltage and Temperature Dependence of Magneto-Electric Properties in Double-Barrier Magnetic Tunnel Junction with Amorphous Co-Fe-B Electrodes

Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Quantum Oscillations of Tunneling Magnetoresistance in Magnetic Tunnel Junctions

Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias

Nonlinear Transport In Tunnel Magnetoresistance Systems

Annealing of Cofeb/Mgo Based Single and Double Barrier Magnetic Tunnel Junctions: Tunnel Magnetoresistance, Bias Dependence, and Output Voltage

Nonequilibrium Spin Accumulation and Tunneling Magnetoresistance in a Ferromagnet/semiconductor/ferromagnet Double Tunnel Junction

Theory for Tunnel Magnetoresistance Oscillation

Oscillating Magnetoresistance In Diluted Magnetic Semiconductor Barrier Structures

Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers

Oscillatory dependence of tunneling magnetoresistance on barrier thickness in magnetic tunnel junctions

Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer

Enhanced Spin Injection and Voltage Bias in (zn,co)o/mgo/(zn,co)o Magnetic Tunnel Junctions

Anomalous Voltage Dependence of Tunnel Magnetoresistance in (zn, Co)O-Based Junction with Double Barrier

Temperature and Bias-Assisted Transport Properties of LSMO/AlO/CoFeB Magnetic Tunnel Junction

Fully Epitaxial (zn,co)o∕zno∕(zn,co)o Junction and Its Tunnel Magnetoresistance

Microstructure Investigation on Barrier Shapes of Double Barrier Magnetic Tunnel Junctions

Magnetization Reversal Mechanism of Magnetic Tunnel Junctions