Nonlinear Transport In Tunnel Magnetoresistance Systems

L. Sheng,Y. Chen,H. Teng,C. Ting
DOI: https://doi.org/10.1103/PhysRevB.59.480
IF: 3.7
1999-01-01
Physical Review B
Abstract:The nonlinear electronic tunneling through ferromagnet (FM)/insulator (I)/FM single-barrier and FM/I/FM/I/FM double-barrier magnetic layered structures is studied using the Landauer-Buttiker scattering approach. For the single-barrier junctions, the resulting bias dependence of tunnel magnetoresistance is qualitatively in agreement with experimental observation. The absolute value of magnetoresistance is shown to be enhanced in the double-barrier systems. Under suitable conditions. large negative and positive magnetoresistance effects occur alternately with increasing bias voltage. These features make double-barrier resonant-tunnel structures more attractive magnetoresistance devices. [S0163-1829(99)07301-4].
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