Abstract:The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance, such as giant magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR1">1</a>,<a href="/articles/s41567-019-0621-6#ref-CR2">2</a> and tunnelling magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR3">3</a>,<a href="/articles/s41567-019-0621-6#ref-CR4">4</a>, in magnetic multilayers. Recently, new types of this effect have been observed in much simpler bilayers consisting of ferromagnetic and non-magnetic thin films<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="/articles/s41567-019-0621-6#ref-CR10">10</a>. However, the magnitude of the change in resistance with magnetic field in these materials is very small, varying between 0.01 and 1%. Here, we demonstrate that non-magnetic–ferromagnetic bilayers consisting of a conducting non-magnetic InAs quantum well and an insulating ferromagnetic (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance of approximately 80% at high magnetic field, and that its magnitude can be controlled by a gate. The mechanism for this large magnetoresistance is a strong magnetic proximity effect. The spin splitting in the InAs quantum well induced by the magnetic proximity effect can be varied between 0.17 meV and 3.8 meV by varying the gate voltage. In principle, this provides a mechanism to locally access Majorana fermions in InAs-based Josephson junctions<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41567-019-0621-6#ref-CR14">14</a> and introduces a new concept of magnetic-gating spin transistors in which the non-magnetic channel current is modulated by both electrical and magnetic means.

Giant magnetoresistance caused by magnetic-field-sensitive resonant tunnelling in a random multibarrier semiconductor superlattice

Giant magnetoresistance effect due to the tunneling between quantum anomalous Hall edge states

Longitudinal Magnetotransport in Long-Period Semiconductor Superlattices

Momentum matching induced giant magnetoresistance in two-dimensional magnetic tunnel junctions

Giant tunneling magnetoresistance and quantum interference effect in ferromagnet/ferromagnet/s-wave superconductor junctions

High-quality Resonant Tunneling Through a Random Multibarrier Superlattice

Magnetotransport Properties Of Fibonacci Semiconductor Superlattices

Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions

Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic–non-magnetic bilayers

Tunneling Magnetoresistance Effect in Ferromagnet/quantum Dot/superconductor Junctions

Giant Magnetoresistance Effect in A Magnetic-Electric Barrier Structure

Enhanced Magnetoresistance in A Magnetic-Particle Chain

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co2MnSi Electrodes

Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi2P4

Magnetoplasmon Polaritons and Resonant Optical-Transmission of A Finite Random-Thickness Superlattice in A Magnetic-Field

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Large magnetoresistance induced by quantum charge fluctuations in magnetic double dots

Electrical-gates-controlled giant tunneling magnetoresistance and its quasi-periodic oscillation in an interlaced magnetic-electric silicene superlattice

Nonequilibrium Spin Accumulation and Tunneling Magnetoresistance in a Ferromagnet/semiconductor/ferromagnet Double Tunnel Junction

Electron-Transport Through One-Dimensional Lateral Surface Superlattices In Magnetic-Fields