Abstract:The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.

Enhanced Spin Injection and Voltage Bias in (zn,co)o/mgo/(zn,co)o Magnetic Tunnel Junctions

Fully Epitaxial (zn,co)o∕zno∕(zn,co)o Junction and Its Tunnel Magnetoresistance

Bias Voltage and Temperature Dependence of Magneto-Electric Properties in Double-Barrier Magnetic Tunnel Junction with Amorphous Co-Fe-B Electrodes

Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

Anomalous Voltage Dependence of Tunnel Magnetoresistance in (zn, Co)O-Based Junction with Double Barrier

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

Improvement of Tunneling Magnetoresistance Induced by Antiferromagnetic Spin Orientation

Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions

Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Designing Van Der Waals Magnetic Tunnel Junctions with High Tunnel Magnetoresistance Via Brillouin Zone Filtering.

Spin-Dependent Tunneling Spectroscopy in Mgo-Based Double-Barrier Magnetic Tunnel Junctions

First-principles Study of Bias Effect on Magnetoresistance of Fe/MgO/Fe Tunnel Junctions

High inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions

Voltage-controlled magnetic anisotropy effect through a high- k MgO/ZrO 2 /MgO hybrid tunneling barrier

Designing High Tunnel Magnetoresistance van der Waals Magnetic Tunnel Junction via Brillouin Zone Filtering

Perpendicular Manganite Magnetic Tunnel Junctions Induced by Interfacial Coupling

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

Magnetoresistive Sensors with Hybrid Co/insulator/ZnO:Co Junctions