Abstract:Based on the group velocity concept and the two-band model, we investigated tunneling properties of spin-polarized electrons traversing ferromagnetic/insulator (semiconductor) double junctions under the influence of an external electric field. The tunneling time and the transmission coefficient, as well as the spin polarization, were calculated and examined. Effects of the electric field and quantum size are also considered. The results indicate that the tunneling time strongly depends on the spin orientation of tunneling electrons. In a wide range of incident energy, spin-down electrons spend a longer time tunneling through the structure than spin-up ones, and the difference of the tunneling time Δτ between electrons with opposite spin orientation is very sensitive to the incident energy in the lower energy region. Moreover, the variation of Δτ with the increasing of the incident energy shows pronounced oscillations for certain applied bias and structural size. The results also indicate that spin polarization shows frequent wide-range oscillations and its magnitude decays slowly with the increasing of the incident energy, which reveal that the spin polarization in ferromagnetic/insulator (semiconductor) junctions possesses quite different properties from those exhibited in semiconductor electric-barrier or magnetic-barrier structures as well as semiconductor/semimagnetic semiconductor hybrid heterostructures.

Tunneling transport of two-dimensional spin-electrons through magnetic quantum structures

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB<sub>6</sub>

Spin-polarized Transport Through a Magnetic Heterostructure: Tunneling and Spin Filtering Effect

Electron coherent tunneling in low-dimensional magnetic quantum structures

Spin Filtering in the Double-Barrier Structure

Spin Filtering Through Multi- -Magnetic-barrier Structures

Wave-vector Filtering and Spin Filtering in a Magnetic Double-Barrier and Double-Well Structure

Electron-spin Polarization in Magnetically Modulated Quantum Structures

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field

Spin-Dependent Transport and Densities of States in Non-collinear Magnetic Barriers

Spin-Tunneling Time in A Hybrid Semimagnetic/Semiconductor Heterostructure with A Single Paramagnetic Layer

Spin-polarized Tunneling Through a Diluted Magnetic Semiconductor Quantum Dot

Electronic Transport in Nanostructures Consisting of Magnetic Barriers.

Spin-Dependent Low-Frequency and Weakly Nonlinear Electrical Transport in Spin-Polarized Tunneling Junctions

Transport Properties of Two-Dimensional Electron Gases in Antiparallel Magnetic-Electric Barrier Structures

A Study on Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Spin Polarized Tunneling Through Diluted Magnetic Semiconductor Barriers

Spin-bias-induced Transport Through a Quantum Dot Coupled to a Ferromagnetic Lead

Spin-Dependent Transport in Diluted-Magnetic-Semiconductor/Semiconductor Quantum Wires

Spin Tunneling in Ferromagnet–insulator–ferromagnet Junctions

Spin Polarization Through Resonant Tunnelling in a Magnetic Double-Barrier and Double-Well Quantum Structure