Abstract:Based on the group velocity concept and the two-band model, we investigated tunneling properties of spin-polarized electrons traversing ferromagnetic/insulator (semiconductor) double junctions under the influence of an external electric field. The tunneling time and the transmission coefficient, as well as the spin polarization, were calculated and examined. Effects of the electric field and quantum size are also considered. The results indicate that the tunneling time strongly depends on the spin orientation of tunneling electrons. In a wide range of incident energy, spin-down electrons spend a longer time tunneling through the structure than spin-up ones, and the difference of the tunneling time Δτ between electrons with opposite spin orientation is very sensitive to the incident energy in the lower energy region. Moreover, the variation of Δτ with the increasing of the incident energy shows pronounced oscillations for certain applied bias and structural size. The results also indicate that spin polarization shows frequent wide-range oscillations and its magnitude decays slowly with the increasing of the incident energy, which reveal that the spin polarization in ferromagnetic/insulator (semiconductor) junctions possesses quite different properties from those exhibited in semiconductor electric-barrier or magnetic-barrier structures as well as semiconductor/semimagnetic semiconductor hybrid heterostructures.

Electron-spin Polarization in Magnetically Modulated Quantum Structures

Polarization bistability and resultant spin rings in semiconductor microcavities

Spin Polarization Induced By An External Electric Field In A Hybrid Magnetic-Electric Barrier

Spin Polarization Through Resonant Tunnelling in a Magnetic Double-Barrier and Double-Well Quantum Structure

Tunneling transport of two-dimensional spin-electrons through magnetic quantum structures

A Study on Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Wave-vector Filtering and Spin Filtering in a Magnetic Double-Barrier and Double-Well Structure

Spin-polarized Transport Through a ZnSe/Zn1−xMnxSe Heterostructure under an Applied Electric Field

Switching of Current Spin Polarization by Electron-Phonon Interaction in a Quantum Dot Device

Electric control of spin polarization orientation in a magnetic–electric barrier structure

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Spin Filtering Through Multi- -Magnetic-barrier Structures

Spin-polarized Transport Through a Magnetic Heterostructure: Tunneling and Spin Filtering Effect

Spin-Dependent Transport and Densities of States in Non-collinear Magnetic Barriers

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

Spin Polarized Transport of an Interacting Quantum Dot

Spin Filtering Through Magnetic-Field-Modulated Double Quantum Dot Structures

Spin-polarized Transport in One-Dimensional Waveguide Structures with Spatially-Periodic Electronic and Magnetic Fields

Spin-polarized Tunneling Through a Diluted Magnetic Semiconductor Quantum Dot

Photon-Assisted Spin-Dependent Tunneling in a Magnetic-Field Tunable Diluted Magnetic Semiconductor Structure with a Nonmagnetic Barrier