Abstract:Based on the Floquet theory and transfer-matrix method, We investigated the influence of light-field on the spin-polarized transport properties for electrons tunneling through two kinds of magnetic-electric barrier structures (the \begin{document}$\delta$\end{document}-doped magnetic-barrier can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure and the light-field can be realized by placing a hemispherical silicon lens on the back surface of the semiconductor substrate). Transport properties result from the interaction of electrons with the light-field by means of photon absorption and emission. It is found that the light-field can greatly affect the transmission probabilities as well as the corresponding polarizations. The distance between the adjacent peaks and the number of the transport peaks can be controlled by adjusting the frequency and the amplitude of the light-field, respectively. It is shown that a significant spin-polarization effect can be induced by such light-field in the kind of antisymmetric magnetic barrier structure (\begin{document}$B_{1}=-B_{2}$\end{document}) and the light-field can greatly change the spin-polarization effect in the kind of symmetric magnetic barrier structure (\begin{document}$B_{1}=B_{2}$\end{document}). When the frequency of the light-field increases, the spin-polarization shifts toward the low-energy end and gradually increases. These remarkable properties of spin polarization may be beneficial for the devising tunable spin filtering devices.

Spin Polarization Induced By An External Electric Field In A Hybrid Magnetic-Electric Barrier

Electric control of spin polarization orientation in a magnetic–electric barrier structure

Spin Filtering in the Double-Barrier Structure

A Study on Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Spin-Dependent Transport and Densities of States in Non-collinear Magnetic Barriers

Electron-spin Polarization in Magnetically Modulated Quantum Structures

Spin transmission in a series of magnetic barrier structure

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

Intrinsic Dynamic Generation of Spin Polarization by Time-Varying Electric Field

Spin Filtering Through Multi- -Magnetic-barrier Structures

Switching of Current Spin Polarization by Electron-Phonon Interaction in a Quantum Dot Device

Light-field Assisted Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Spin Polarization Through Resonant Tunnelling in a Magnetic Double-Barrier and Double-Well Quantum Structure

Spin current and electrical polarization in GaN double-barrier structures

Spin-polarized Transport Through a ZnSe/Zn1−xMnxSe Heterostructure under an Applied Electric Field

Spin-Polarized Transport in A Lateral Two-Dimensional Diluted Magnetic Semiconductor Electron Gas

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Spin Polarized Tunneling Through Diluted Magnetic Semiconductor Barriers

Spin Filtering in Parallel Magnetic-Barrier Structures

Spin Filtering in Single Magnetic Barrier Structures Revisited

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field