Abstract:Based on the group velocity concept and the two-band model, we investigated tunneling properties of spin-polarized electrons traversing ferromagnetic/insulator (semiconductor) double junctions under the influence of an external electric field. The tunneling time and the transmission coefficient, as well as the spin polarization, were calculated and examined. Effects of the electric field and quantum size are also considered. The results indicate that the tunneling time strongly depends on the spin orientation of tunneling electrons. In a wide range of incident energy, spin-down electrons spend a longer time tunneling through the structure than spin-up ones, and the difference of the tunneling time Δτ between electrons with opposite spin orientation is very sensitive to the incident energy in the lower energy region. Moreover, the variation of Δτ with the increasing of the incident energy shows pronounced oscillations for certain applied bias and structural size. The results also indicate that spin polarization shows frequent wide-range oscillations and its magnitude decays slowly with the increasing of the incident energy, which reveal that the spin polarization in ferromagnetic/insulator (semiconductor) junctions possesses quite different properties from those exhibited in semiconductor electric-barrier or magnetic-barrier structures as well as semiconductor/semimagnetic semiconductor hybrid heterostructures.

Spin-Tunneling Time in A Hybrid Semimagnetic/Semiconductor Heterostructure with A Single Paramagnetic Layer

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field

Spin-Dependent Delay Time and the Hartman Effect in Tunneling Through Diluted-Magnetic-Semiconductor/Semiconductor Heterostructures

Spin Tunneling Properties in Mesoscopic Magnets: Effects of A Magnetic Field

Tunneling transport of two-dimensional spin-electrons through magnetic quantum structures

Asymmetry and separation of spin tunneling time in ZnSe/Zn 1-x Mn x Se multilayers

Spin filtering and spin separation in diluted magnetic semiconductor hybrid systems

Spin-dependent Tunneling Time in Periodic Diluted-Magnetic-semiconductor/nonmagnetic-barrier Superlattices

Spin-Resonant Suppression And Enhancement In Znse/Zn1-Xmnxse Multilayer Heterostructures

Spin-polarized Transport Through a Magnetic Heterostructure: Tunneling and Spin Filtering Effect

Spin- and Valley-Related Tunneling Time of Massive Dirac Electrons in a Ferromagnetic MoS2 Quantum Structure

Coupling effects of layers on spin transport in ZnSe/Zn 1 - x Mn x Se heterostructures

Angular-dependent Spin Tunneling in Mesoscopic Biaxial Antiferromagnets

The electric field effect on spin injection in tunneling regime

Spin Transport in Ferromagnet/Ferromagnet/S-Wave Superconductor Hybrid System

Spin-polarized Transport Properties in Diluted Magnetic Semiconductor Heterostructures

Spin-flip process through a quantum dot coupled to ferromagnetic electrodes

Tunneling time in magnetic barrier structures

Spin polarization in time domain for electrons in a magnetic microstructure

Spin Tunnelling of Trigonal and Hexagonal Ferromagnets in an Arbitrarily Directed Magnetic Field

Ultrafast Optical Observation of Spin-Pumping Induced Dynamic Exchange Coupling in Ferromagnetic Semiconductor/metal Bilayer.