Abstract:Generating,manipulating and detecting a spin current are regarded as main tasks of spintronics.Spin Hall effect provides an alternative route to generate the spin current in semiconductors without spin injection.However,the spin current does not conserve in systems with spin-orbit coupling.Recently,much attention has been absorbed on the understanding of such an issue.We review the recent research progresses on the spin current and spin Hall effect in systems with spin-orbit coupling.In terms of SU(2)gauge potentials,the naturally defined spin current obeys a covariant continuity equation.This equation plays a key role in keeping the consistency of the SU(2)Kubo formula with different gauge fixings.After introducing the SU(2)field strength tensor,the spin force that electrons experience in the presence of the SU(2)gauge fields can be easily obtained.It reduces to the Stern-Gerlach force if only the U(1)magnetic field is present.Since there are seemly less application of the extrinsic spin Hall effect which depends on the impurity scattering,more attentions were paid to the intrinsic spin Hall effect recently.In this effect,aU(1)electric field can induce a transverse spin current and lateral spin accumulations in nonmagnetic semiconductors.The spin Hall effect has been observed in both semiconductors and metals.The spin Hall conductivity is a universal constant in the clean twodimensional electron gas,while the impurity effect on this conductivity used to be quite controversial which can be resolved if the dephasing effect is considered.In this review,the spin transport in the bilayer electron gas is also discussed.Both the spin Hall conductivity and tunnelling spin conductivity exhibit resonant peaks at the energy-degeneracy point.When taking into account the difference of strengthes of impurity potentials between layers,the tunnelling spin conductivity manifests an asymmetric feature with respect to the gate voltage,i.e.,a spin diode behavior is expected to occur in this bilayer system.

The electric field effect on spin injection in tunneling regime

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field

Electron Interaction Effects on Spin Injection into Semiconductors

Electron space charge effect on spin injection into semiconductors

Spin diffusion and injection in semiconductor structures: Electric field effects

Injection of spin-polarized carriers in ferromagnet/superconductor tunnel junctions

Influence of Potential Barrier in Spin-Dependent Transport in Magnetic Tunnel Junctions

Schottky-Barrier-Induced Spin Relaxation in Spin Injection

Calculations of the Spin-Polarization of the Electronic Current Injected from A Ferromagnetic Metal into A Semiconductor

A Novel Spin-Polarized Transport Effect Based on Double-Schottky Barriers

A Study on Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

SPIN CURRENT AND SPIN HALL EFFECT IN SYSTEMS WITH SPIN-ORBIT COUPLING

Spin-Tunneling Time in A Hybrid Semimagnetic/Semiconductor Heterostructure with A Single Paramagnetic Layer

Electric-Field Effects on Electronic Tunneling Transport in Magnetic Barrier Structures

Spin-polarized Tunneling Through a Diluted Magnetic Semiconductor Quantum Dot

External magnetic field on the thermoelectric and thermospin effect in a quantum dot

Spin injection efficiency from two adjoining ferromagnetic metals into a two-dimensional electron gas

Light-field Assisted Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Effect of Spin-Flip Scattering on Electrical Transport in Magnetic Tunnel Junctions

Spin-bias-induced Transport Through a Quantum Dot Coupled to a Ferromagnetic Lead