Abstract:In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analogue in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes locally determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor (NS$^+$) at the FM interface, thus FM/NS$^+$/NS structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors.

Spin injection efficiency from two adjoining ferromagnetic metals into a two-dimensional electron gas

SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR

Spin diffusion and injection in semiconductor structures: Electric field effects

Electron Interaction Effects on Spin Injection into Semiconductors

Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

Influence of Potential Barrier in Spin-Dependent Transport in Magnetic Tunnel Junctions

Spin Filtering in the Double-Barrier Structure

Tunable Spin Polarization in a Two-Dimensional Electron Gas Modulated by a Ferromagnetic Metal Stripe and a Schottky Metal Stripe

Spin-flip process through a quantum dot coupled to ferromagnetic electrodes

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

Calculations of the Spin-Polarization of the Electronic Current Injected from A Ferromagnetic Metal into A Semiconductor

The electric field effect on spin injection in tunneling regime

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

Ultrafast magnetization enhancement and spin current injection in magnetic multilayers by exciting the nonmagnetic metal

Injection of spin-polarized carriers in ferromagnet/superconductor tunnel junctions

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.

Spin Filtering And Spin-Polarization Reversal In Multilayered Ferromagnetic Metal/Semiconductor Heterostructures

Spin Injection into and Spin Pumping by Non-Collinear Antiferromagnets

Spin-filtering Junctions with Double Ferroelectric Barriers

Spin Injection Based on the Spin Gapless Semiconductor(sgs)/semiconductor Heterostructures

Spin Filtering in Single Magnetic Barrier Structures Revisited