Abstract:First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical properties. But, current standard approach using the so-called "jellium model" has encountered both conceptual ambiguity and computational difficulty, especially for low-dimensional semiconducting materials. In this paper, we propose a more physical and straightforward "transfer to real state" model to calculate the formation energies of charged defects in both three-dimensional (3D) bulk and low-dimensional semiconductors. Within this universal model, the ionized electrons or holes are placed on the realistic host band-edge states instead of the virtual jellium state; therefore, rendering it not only naturally keeps the supercell charge neutral, but also has clear physical meaning, thus can be easily extended to study other physical properties such as exciton binding energy, free carrier bound to the defect in low-dimensional systems. This realistic model reproduces the same accuracy as the traditional jellium model for most of the 3D semiconducting materials, and remarkably, for the low-dimensional structures, it can cure the divergence caused by the artificial long-range electrostatic energy encountered in the jellium model, and hence gives meaningful formation energies of defects in charged-state and transition-energy levels of the corresponding defects. Our realistic method, therefore, will have significant impact for the study of defect physics in all low-dimensional systems.

Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

Definition of electron polar scattering angle on ionized impurities for Monte Carlo simulation of charge carrier transport in semiconductors

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities

First-principles ionized-impurity scattering and charge transport in doped materials

A unified density gradient approach to ‘ab-initio’ ionised impurity scattering in 3D MC simulations of nano-CMOS variability

Numerical simulation of an energy-transport model for partially quantized particles

Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

A New Approach to Non-Linear Transport for an Electron Impurity System in A Static Electric-Field

A Cartesian Quasi-Classical Model to Nonequilibrium Quantum Transport: the Anderson Impurity Model

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

A realistic dimension-independent approach for charged defect calculations in semiconductors

Simulation of "ab Initio" Quantum Confinement Scattering in Utb Mosfets Using Three-Dimensional Ensemble Monte Carlo

Accurately Determining Defect Ionization Energy in Low-Dimensional Semiconductors: Charge Corrected Jellium Model

Electro-Thermo-Chemical Computational Models for 3D Heterogeneous Semiconductor Device Simulation

Model of DC tunneling conductivity via hydrogen‐like impurities in heavily doped compensated semiconductors

Scattering approach to impurity thermodynamics

Charge Scattering and Mobility in Atomically Thin Semiconductors

Diffusion Approximation of a Scattering Matrix Model of a Semiconductor Superlattice.

Bound Exciton Model for an Acceptor in A Semiconductor

Efficient calculation of carrier scattering rates from first principles