Abstract:The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer semiconductors are evaluated. The roles of individual scattering rates are tracked as the 2D electron gas density is varied over orders of magnitude at various temperatures. From a comparative study of the individual scattering mechanisms, we conclude that all current reported values of mobilities in atomically thin transition-metal dichalcogenide semiconductors are limited by ionized impurity scattering. When the charged impurity densities are reduced, remote optical phonon scattering will determine the ceiling of the highest mobilities attainable in these ultrathin materials at room temperature. The intrinsic mobilities will be accessible only in clean suspended layers, as is also the case for graphene. Based on the study, we identify the best choices for surrounding dielectrics that will help attain the highest mobilities.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Understand and improve the electron mobility in atomic - layer - thickness semiconductor materials (such as monolayer MoS₂)**. Specifically, the paper mainly focuses on the following aspects: 1. **Limitations of scattering mechanisms on mobility**: - Evaluated the influence of different scattering mechanisms (such as ion - impurity scattering, remote optical - phonon scattering, etc.) on electron mobility in monolayer semiconductors. - By comparing the effects of different scattering mechanisms, it is concluded that all currently reported mobility values are limited by ion - impurity scattering. 2. **Influence of the dielectric environment**: - Studied the influence of the surrounding dielectric environment on electron mobility. In particular, high - dielectric - constant (high - κ) dielectrics can significantly change the Coulomb interaction and the free - carrier screening effect. - It was found that when the charged - impurity density is reduced, remote optical - phonon scattering will become the determinant of the upper limit of the mobility of these ultrathin materials at room temperature. 3. **Optimal dielectric selection**: - By studying the mobility in different dielectric environments, the optimal dielectric selection that can help achieve the highest mobility was determined. For example, AlN - and BN - based dielectrics provide a good compromise and can provide high gate capacitance while maintaining high mobility. 4. **Combination of experiment and theory**: - The paper combined experimental data, calibrated the calculation model, and predicted how to significantly improve the mobility at low temperatures by reducing the impurity density. - Emphasized that the mobility measured in current experiments is far below the intrinsic potential of these materials and pointed out the direction for future improvement. In summary, this paper aims to provide guidance for future experimental designs to achieve higher electron mobility, especially in applications such as field - effect transistors (FETs), through in - depth analysis of the influence of scattering mechanisms and dielectric environments.

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