Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Carrier Injection and Scattering in Atomically Thin Chalcogenides

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Charge Scattering and Mobility in Atomically Thin Semiconductors

Coulomb screening and scattering in atomically thin transistors across dimensional crossover

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors

Edge-induced Schottky barrier modulation at metal contacts to exfoliated molybdenum disulfide flakes

Charge-Carrier Dynamics of Evaporated Bismuth-Based Chalcogenide Thin Films Probed with Time-Resolved Microwave Conductivity

Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance

Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Spatially heterogeneous ultrafast interfacial carrier dynamics of 2D-MoS2 flakes

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

Two-dimensional Semiconductor Computational Carrier Mobility Genome