Abstract:FEM combining with the K·P theory is adopted to systematically investigate the effect of wetting layers on the strain-stress profiles and electronic structures of self-organized InAs quantum dot. Four different kinds of quantum dots are introduced at the same height and aspect ratio. We found that 0.5nm wetting layer is an appropriate thickness for InAs/GaAs quantum dots. Strain shift down about 3%∼4.5% for the cases with WL (0.5nm) and without WL in four shapes of quantum dots. For band edge energy, wetting layers expand the potential energy gap width. When WL thickness is more than 0.8nm, the band edge energy profiles cannot vary regularly. The electron energy is affected while for heavy hole this impact on the energy is limited. Wetting layers for the influence of the electronic structure is obviously than the heavy hole. Consequently, the electron probability density function spread from buffer to wetting layer while the center of hole's function moves from QDs internal to wetting layer when introduce WLs. When WLs thickness is larger than 0.8nm, the electronic structures of quantum dots have changed obviously. This will affect the instrument's performance which relies on the quantum dots' optical properties.

Impact Of The Cap Layer On The Electronic Structures And Optical Properties Of Self-Assembled Inas/Gaas Quantum Dots

Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Effects of the Thickness of Spacing Layer and Capping Layer on the Strain Distribution and Wavelength Emission of Inas/Gaas Quantum Dot

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Emission Dynamics of Inas Self-Assembled Quantum Dots with Different Cap Layer Structures

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Improved Optical Performance of InAs Quantum Dot Structure via Suitable Manipulation of GaAs Cap Layer Growth

The Electronic Structure of Truncated-Conical Shaped InAs/GaAs Quantum Dot with Wetting Layers

Wetting layers effect on InAs/GaAs quantum dots

Effects Of Gaas On Photoluminescence Properties Of Self-Assembled Inas Quantum Dots

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Electronic Structure Of Self-Assembled Inas/Inp Quantum Dots: Comparison With Self-Assembled Inas/Gaas Quantum Dots

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Impact of GaNAs Strain Compensation Layer on the Electronic Structure of InAs/GaAs Quantum Dots

The Strain Energy Density Distribution of the Capping Layer Surface for InAs/GaAs Quantum Dot along Different Growth Directions

Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots

Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots

Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer