Abstract:InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and have long been of interest for incorporation into quantum optoelectronic devices ranging from single photon sources to multi-bit quantum computers. The properties of single QDs, or carriers confined within those QDs, can be tuned by external electric fields, which provides an important tool for the development of scalable and tunable devices. Deterministic charging of a QD with a single electron or hole is an important tool for quantum devices and is well-established under the application of growth-direction electric fields in a diode structure. Here, we report a new charging mechanism for a single QD in a 3-electrode device that does not contain a vertical diode and can be used to control electric field profiles in two dimensions. We fabricate the device with E-beam lithography and characterize photoluminescence from single QDs under different bias configurations. Using a combination of experimental data and COMSOL band structure calculations, we explain how the charging originates in the electrical-injection of holes induced by lateral electric fields. We discuss the applications for this device and the potential for full 2-D electric field control of a single QD and QDM.

What problem does this paper attempt to address?

The core problem that this paper attempts to solve is to achieve deterministic charging of a single InAs quantum dot (QD), especially by injecting holes through a lateral electric field. Traditionally, charging of a single quantum dot can be achieved by applying an electric field in the vertical direction (i.e., the growth direction). However, this method depends on a vertical diode structure and it is difficult to achieve precise control of a two - dimensional electric field. ### Specific Problems and Solutions: 1. **Limitations of Existing Methods**: - The traditional vertical - field charging method requires a vertical diode structure, which limits the flexibility of electric - field control. - Existing technologies have difficulty in achieving a two - dimensional electric - field configuration for simultaneously controlling the charging state, emission wavelength, and fine - structure splitting (FSS). 2. **Research Objectives**: - Design and fabricate a new type of three - electrode device that can charge a single quantum dot using a lateral electric field without including a vertical diode. - Achieve two - dimensional electric - field control of a single quantum dot or a quantum - dot molecule (QDM) for more flexible and precise regulation. ### Solutions: - **Device Design and Fabrication**: The researchers designed a three - electrode device, in which two lateral electrodes are used to apply a lateral electric field and the top electrode is used for optical access to the quantum dot. - **Experimental Verification**: Through micro - photoluminescence (micro - PL) measurements, the researchers observed the charging behavior of quantum dots under different bias conditions. - **Theoretical Simulation**: Band - structure simulations were carried out using COMSOL software to explain how the lateral electric field induces hole tunneling into the quantum dot, thereby achieving charging. ### Key Findings: - When a negative voltage is applied, the lateral electric field can effectively inject holes into the quantum dot, resulting in a charging phenomenon. - When a positive voltage is applied, no significant charging effect was observed due to the weak lateral electric field. - By combining experimental data and simulation results, the researchers demonstrated that the lateral electric field is the main mechanism for charging. ### Significance: This research provides a new approach for the development of tunable quantum optoelectronic devices, especially taking an important step in achieving arbitrary two - dimensional electric - field control. This is of great significance for future quantum - computing and quantum - communication applications.

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