Abstract:This study revisits the hole injection mechanism in quantum dot light‐emitting diodes. Bias voltage effectively reduces the energy barrier between the hole transport layer (HTL) and the quantum dots (QDs) and forms a triangular potential barrier at the HTL/QDs interface, allowing holes to be injected from the HTL to the QDs through thermally assisted tunneling. Injecting holes from the hole transport layer (HTL) into the quantum dot (QD) emitting layer in quantum dot light‐emitting diodes (QLEDs) is considered challenging due to the presence of a relatively high hole injection barrier at the HTL/QD interface. However, QLEDs with exceptional brightness and efficiency are achieved, prompting a reevaluation of the traditional hole injection mechanisms. This study examines the hole injection mechanism in QLEDs using a combination of experiments and simulations. The results demonstrate that the applied bias significantly reduces the barrier height between the highest occupied molecular orbital level of the HTL and the valence band (VB) of the QDs, facilitating hole injection. The bending of the lowest unoccupied molecular orbital energy level of the HTL at the HTL/QD interface confines electrons within the QD, effectively minimizing leakage current. Additionally, the triangle‐shaped potential barrier arising from the bending of the VB energy level of the QDs creates favorable conditions for hole–tunneling injection. Moreover, both simulations and experiments consistently demonstrate that the predominant pathway for hole injection from the HTL to the QDs in the QLED device involved thermally assisted tunneling. This study is important to understand the hole injection mechanism in QLEDs.

Hole Transport Assisted by the Piezoelectric Field in In0.4Ga0.6N/GaN Quantum Wells under Electrical Injection

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Charging of a Single InAs QD with Electrically-Injected Holes using a Lateral Electric Field

Hole Mobility Enhancement Mechanism of Wurtzite GaN/AlN Heterojunction Quantum Well Under Tensile and Compressive Stresses

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Hole transport in p-type GaAs quantum dots and point contacts

Study on Electroluminescence Spectra of InxGa1－xN/GaN-MQWs Materials with High Indium Contents

Gain Characteristics of InGaN-GaN Quantum Wells

Quantum transport in an ambipolar InSb nanowire quantum dot device

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Carrier localization mechanisms in InGaN/GaN quantum wells

Investigation of the Electroluminescence Spectrum Shift of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes under Direct and Pulsed Currents

Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13ga0.87n/In0.03ga0.97n Quantum Wells

Study on the Self-Absorption of InGaN Quantum Wells at High Photon Density.

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Analysis of Optical Gain Property in the Ingan/Gan Triangular Shaped Quantum Well under the Piezoelectric Field

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure

Revisiting Hole Injection in Quantum Dot Light‐Emitting Diodes

Observation of Hole Accumulation at the Interface of an Undoped Ingan/Gan Heterostructure

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells