Abstract:Identifying atomic configurations of impurities in semiconductors is of fundamental interest and practical importance in designing electronic and optoelectronic devices. C impurity acting as one of the most common impurities in GaN, it is believed for a long time that it substitutes at Ga site forming C Ga with +1 charge-state in p -type GaN, while it substitutes at N site forming C N with -1 charge-state in n -type GaN. However, by combining x-ray absorption spectroscopy and first-principles simulations, we observed that C is mainly occupying the N site rather than the Ga one in p -GaN. We further reveal that this is due to an H-induced E F -tuning effect. During growth, the existing H can passivate Mg dopants and upshifts the E F to the upper region of bandgap, leading to the C N formation. After the p -type activation by annealing out H, although the E F is pushed back close to the valence band maximum, whereas the extremely large kinetic barrier can prevent the migration of C from the metastable C N site to ground-state C Ga site, hence stabilizing the C N configuration. Additionally, the C N with neutral charge-state ( CN0 ) in the p -GaN is further observed. Therefore, the real C-related hole-killer in p -type GaN could be C N rather than the commonly expected C Ga . Our work not only offers the unambiguous evidence for the C defect formation in p -GaN but also contributes significantly to an in-depth understanding of the C-related hole-killers and their critical role on electrical and optoelectrical properties of p -GaN and even p -AlGaN.

Observation of Hole Accumulation at the Interface of an Undoped Ingan/Gan Heterostructure

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

A Low Resistivity N++-Ingan/p++-gan Polarization-Induced Tunnel Junction

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Hole Transport Assisted by the Piezoelectric Field in In0.4Ga0.6N/GaN Quantum Wells under Electrical Injection

A Study of the Interface and the Related Electronic Properties in N-Al0.35ga0.65n/Gan Heterostructure

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

Negative Capacitance in Gan/Algan Heterojunction Dual-Band Detectors

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Studies of Metal–ferroelectric–gan Structures

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

On the Inversion in Gaas Metal-Insulator-Semiconductor Heterostructures