Abstract:Two dimensional electron gases in AlxGa1−xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical properties for undoped and silicon doped transistor structures by a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance–voltage profiling measurements. The polarization induced sheet charge bound at the AlGaN/GaN interfaces was calculated from different sets of piezoelectric constants available in the literature. The sheet carrier concentration induced by polarization charges was determined self-consistently from a coupled Schrödinger and Poisson equation solver for pseudomorphically and partially relaxed barriers with different alloy compositions. By comparison of theoretical and experimental results, we demonstrate that the formation of two dimensional electron gases in undoped and doped AlGaN/GaN structures rely both on piezoelectric and spontaneous polarization induced effects. In addition, mechanisms reducing the sheet carrier concentrations like nonabrupt interfaces, dislocations, and the possible influence of surface states on the two dimensional electron gases will be discussed briefly.

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

Extraction of polarization-induced charge density in modulation-doped Alx Ga1-x N/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures

Polarization Effects Simulation of AlGaN/GaN Heterojunction by Using a Symbolistic Δ-Doping Layer

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

Polarization Effects in Ferroelectric Gate AlGaN/GaN High Electron Mobility Transistors

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Polarization Induced High Al Composition AlGaN P–n Junction Grown on Silicon Substrates

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure