Abstract:ConspectusThe controlled doping of organic semiconductors (OSCs) is crucial not only for improving the performance of electronic and optoelectronic devices but also for enabling efficient thermoelectric conversion and spintronic applications. The mechanism of doping for OSCs is fundamentally different from that of their inorganic counterparts. In particular, the interplay between dopants and host materials is complicated considering the low dielectric constant, strong lattice-charge interaction, and flexible nature of materials. Recent experimental breakthroughs in the molecular design of dopants and the precise doping with high spatial resolution call for more profound understandings as to how the dopant interacts with the charge introduced to OSCs and how the admixture of dopants alters the electronic properties of host materials before one can exploit controllable doping to realize desired functionalities.By employing state-of-the-art computational tools, we revealed the effects of doping in representative and emerging organic and coordination polymers aiming toward thermoelectric and spintronic applications. We showed that dopants and hosts should be taken as an integrated system, and the type of charge-transfer interaction between them is the key for spin polarization. First, we found doping-induced modifications to the electronic band in a potassium-doped coordination polymer, an n-type thermoelectric material. The charge localization due to the Coulomb interaction between the completely ionized dopant and the injected charge on the polymer backbone and also the polaron band formation at low doping levels are responsible for the nonmonotonic temperature dependence of the conductivity and Seebeck coefficient observed in recent experiments. The mechanistic insights gained from these results have provided important guidelines on how to control the doping level and working temperature to achieve a high thermoelectric conversion efficiency. Next, we demonstrated that the ionized dopants scatter charge carriers via screened Coulomb interactions, and it may become a dominant scattering mechanism in doped polymers. After incorporating the ionized dopant scattering mechanism in PEDOT:Tos, a p-type thermoelectric polymer, we were able to reproduce the measured Seebeck coefficient-electrical conductivity relationship spanning a wide range of doping levels, highlighting the importance of ionized dopant scattering in charge transport.In the two cases described above, charge injection is enabled by integral charge transfer between the dopant and host polymers. In a third example, we showed that a novel type of stacked two-dimensional polymer, conjugated covalent organic frameworks (COFs) with closed-shell electronic structures, can be spin polarized by iodine doping via fractional charge transfer even at high doping levels. We then manifested that magnetization can be attained in nonmagnetic materials lacking metal d electrons and further designed two new COFs with tunable spintronic structure and magnetic interactions after the iodine doping. These findings have suggested a practical route to enable spin polarization in nonradical materials by chemical doping via orbital hybridization, which holds great promise for flexible spintronic applications.

Polarization Doping - Ab Initio Verification of the Concept: Charge Conservation and Locality

Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

Two-dimensional Polar Metal of a PbTe Monolayer by Electrostatic Doping.

Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures

Origin of Versatile Polarization State in CuInP2S6

Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Polarization at the Nanoscale

Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation

Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Electrical Polarization Induced by Atomically Engineered Compositional Gradient in Complex Oxide Solid Solution

Extraction of polarization-induced charge density in modulation-doped Alx Ga1-x N/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Manipulating Ferroelectric Α-In2se3/gan Dipole Interactions by Polarization Engineering

n-type charge transport in heavily p-doped polymers

Chemical Doping of Organic and Coordination Polymers for Thermoelectric and Spintronic Applications: A Theoretical Understanding.

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure