Abstract:Two dimensional electron gases in AlxGa1−xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical properties for undoped and silicon doped transistor structures by a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance–voltage profiling measurements. The polarization induced sheet charge bound at the AlGaN/GaN interfaces was calculated from different sets of piezoelectric constants available in the literature. The sheet carrier concentration induced by polarization charges was determined self-consistently from a coupled Schrödinger and Poisson equation solver for pseudomorphically and partially relaxed barriers with different alloy compositions. By comparison of theoretical and experimental results, we demonstrate that the formation of two dimensional electron gases in undoped and doped AlGaN/GaN structures rely both on piezoelectric and spontaneous polarization induced effects. In addition, mechanisms reducing the sheet carrier concentrations like nonabrupt interfaces, dislocations, and the possible influence of surface states on the two dimensional electron gases will be discussed briefly.

Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation

Extraction of polarization-induced charge density in modulation-doped Alx Ga1-x N/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Polarization Effects Simulation of AlGaN/GaN Heterojunction by Using a Symbolistic Δ-Doping Layer

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Pt Schottky Contact on Modulation-doped AlxGal-xN/GaN Heterostructure

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures

Polarization Induced High Al Composition AlGaN P–n Junction Grown on Silicon Substrates

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Polarization Induced Ultra-High Electron Concentration Up to 1020 Cm-3 in Graded AlGaN

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Polarization Doping - Ab Initio Verification of the Concept: Charge Conservation and Locality

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure