Abstract:In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to investigate the defect characteristics and carrier transport mechanisms in GaN:C layers with different carbon doping concentration. Capacitance-voltage, current-voltage, and deep-level transient spectroscopy measurements were performed at different temperatures. At forward bias, a pinning effect was found at the interface of the GaN:C/GaN:Si layer, due to the defects capturing electrons. The forward currents of the samples with high carbon doping concentration (NC > 1 × 10 19 cm -3 ) increase gradually with increasing forward bias voltage. Ohm's law, space-charge-limited current, and variable-range-hopping mechanisms may dominate the forward current. For the samples with low carbon doping concentration (NC <; 1 × 10 19 cm -3 ), a device turning on behavior was observed, which is attributed to the carriers overcoming a potential barrier. In addition, the DLTS spectra reveal that only electron trapping happens at forward bias for the samples with high carbon doping concentration, while, in addition, hole trapping was observed for the samples with low carbon doping concentration. The process of the carrier capture by defects was demonstrated.

Surface States in the Al x Ga 1-x N Barrier in Al x Ga 1-x N/GaN Heterostructures

Surface States in the Alxga1-Xn Barrier in Alxga1-Xn/Gan Heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Pt Schottky Contact on Modulation-doped AlxGal-xN/GaN Heterostructure

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Extraction of polarization-induced charge density in modulation-doped Alx Ga1-x N/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Surface States of Inaln Film Grown by Mocvd

Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Study on the Subband Properties of AlxGa1-x N/GaN Modulation-Doped Heterostructures

Growth and Characterization of Modulation-Doped Alxga1-Xn/Gan Heterostructures

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterostructures Using Pre-deposition Surface Treatment

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition