What problem does this paper attempt to address?

The problem that this paper attempts to solve is to create a wide electron thin layer in III - V nitride semiconductors through the polarization bulk doping technique. Specifically, the authors utilized the large polarization charges in III - V nitrides to create a high - density mobile electron thin layer without introducing shallow donor impurities. This technique can be used to fabricate layers with high conductivity and is especially suitable for a variety of device structures. ### Main Problems and Solutions 1. **Limitations of Traditional Doping Techniques**: - The traditional shallow "hydrogen - like" doping technique is very mature, but at low temperatures, carriers will freeze due to ionized impurity scattering, resulting in a decrease in mobility. - Although modulation doping improves the low - temperature carrier mobility in quantum - confined structures, it still has certain limitations. 2. **Advantages of Polarization Bulk Doping**: - **No Activation Energy**: The three - dimensional electron thin layer (3DES) formed by polarization bulk doping does not require activation energy and therefore will not freeze at low temperatures. - **High Mobility**: After removing ionized impurity scattering, the mobility of the polarization - doped structure at low temperatures is significantly improved. - **Uniformity**: Through the linearly graded AlGaN/GaN heterojunction, a uniform polarization background charge distribution can be formed in a relatively wide area. ### Experimental Verification To verify these concepts, the authors grew five samples and carried out detailed experimental measurements: - **Sample 1**: A 100 - nm Si - doped GaN layer (shallow donor doping). - **Sample 2, 3, 4**: Linearly graded AlGaN/GaN structures, from GaN to 10%, 20% and 30% AlGaN respectively. - **Sample 5**: A 20 - nm Al0.2Ga0.8N/GaN structure, containing a traditional two - dimensional electron gas (2DEG). ### Experimental Results - **Low - Temperature Characteristics**: The polarization - doped 3DES exhibits similar transport characteristics to the modulation - doped 2DEG and 3DES at low temperatures, that is, the lack of activation energy leads to a temperature - independent carrier density. - **Room - Temperature Characteristics**: The charge - mobility product of the polarization - doped 3DES at room temperature is an order of magnitude higher than that of the comparable shallow - donor - doped sample, showing higher conductivity. - **Application Prospects**: This technique provides a new way to design highly conductive layers and has potential application value especially in field - effect transistors (FETs) and regenerative ohmic contacts. ### Conclusion The paper shows how to achieve bulk doping by engineering the polarization field as an attractive alternative doping technique, especially in III - V nitride semiconductors. The polarization - doped layer exhibits better conductivity than the comparable shallow - donor - doped layer and points out its potential applications in device structures.

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