Abstract:By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon GaN contacting with alpha-In2Se3, the structural stability demonstrates a direct dependence on the polarity assembly, as evidenced by the change of binding energy from -1.39/-1.83 eV in Ga-polarity to -2.99/-1.95 eV in N-polarity. In particular, the polarity inversion of GaN not only dictates the direction of charge transfer but also increases the electrostatic potential differences from 2.92/1.84 eV in N-polarity to 3.65/5.10 eV in Ga-polarity. Moreover, the interfacial polarization and electronic band profiles of alpha-In2Se3/GaN have been further adjusted by applying the external electric field. It is found that the interfacial dipole interaction plays a crucial role in the external electric field modulation, with a direct correlation to the charge distribution at alpha-In2Se3/GaN polar heterointerfaces. By sweeping the external electric field from -0.4 to 0.4 V/& Aring;, the alpha-In2Se3(up arrow)/GaN(up arrow) and alpha-In2Se3(down arrow)/GaN(up arrow) polar heterostructures maintain the type-III electronic band profiles, attributed to the electrostatic shielding effect of high-density charge carriers. However, the band alignments of alpha-In2Se3(up arrow)/GaN(down arrow) and alpha-In2Se3(down arrow)/GaN(down arrow) polar heterostructures have been extensively transformed from type-III, to type-II, and then to type-I. Our findings demonstrate the effective capability of polarity inversion and external electric field on manipulating dipole interactions of 2D/3D polar heterostructures, paving the way for the innovative design and optimization of next-generation optoelectronics, information memory, and neural computing applications.

Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures

Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping

Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions

Polarization‐Induced Band‐Alignment Transition and Nonvolatile p‐n Junctions in 2D Van der Waals Heterostructures

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Stability and Electronic Properties of GaN Phases with Inversion Symmetry to Inherently Inhibit Polarization

Polarity Reversal and Strain Modulation of Janus MoSSe/GaN Polar Semiconductor Heterostructures.

Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

Manipulating Ferroelectric Α-In2se3/gan Dipole Interactions by Polarization Engineering

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Electronic properties by polarization-inducing of the F-GaN-H/SiC van der Waals hetero-structures

Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Polarization properties of wurtzite III nitride indicate the principle of polarization engineering

Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys