Abstract:<p>Nonpolar InGaN/GaN quantum wells (QWs) have gained significance for efficient light emitting since it eliminates polarization-related effects and allows for higher radiative capability. Although much progress has been made in analyzing carrier localization effects at cryogenic temperatures, carrier dynamics at above room temperatures are still not well understood. In this work, we have observed and explored anomalous carrier dynamics of two nonpolar <em>m</em>-plane InGaN/GaN QWs at high temperatures by combining scanning transmission electron microscopy (STEM) and photophysical characterization. Both experimental and theoretical results suggest that carrier lifetime in both samples increases with temperature in a certain range of temperature. However, the reduced integrity and uniformity of QWs make carriers more prone to the nonradiative Shockley-Reed-Hall recombination as temperature rises. Moreover, both acoustic and optical phonon scatterings dominate from 300 to 600 K through the analysis on the evolution of photoluminescence spectra. Overall, these detailed studies provide insights into approaches to evaluate carrier dynamics at elevated temperatures and improve emitting performance to further push the practical efficiency limit.</p>

Gain Characteristics of InGaN-GaN Quantum Wells

Study on the Self-Absorption of InGaN Quantum Wells at High Photon Density.

Linear Electro-Optic Effect Due to the Built-in Electric Field in InGaN/GaN Quantum Wells

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Analysis of Optical Gain Property in the Ingan/Gan Triangular Shaped Quantum Well under the Piezoelectric Field

Hole Transport Assisted by the Piezoelectric Field in In0.4Ga0.6N/GaN Quantum Wells under Electrical Injection

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Spontaneous Emission and Gain Characteristics of Ingaas/Ingaasp Quantum Well Laser

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Anisotropic Ambipolar Diffusion of Carriers in InGaN/GaN Quantum Wells

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser

Study on Electroluminescence Spectra of InxGa1－xN/GaN-MQWs Materials with High Indium Contents

Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

High Spontaneous Emission Rate Asymmetrically Graded 480 Nm InGaN/GaN Quantum Well Light-Emitting Diodes