Abstract:This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. This growth mode is based on a strain-induced transition from two-dimensional layer-by-layer growth towards three-dimensional island growth. The resulting morphology consists of coherent, size homogene, single-crystalline islands (self-assembled quantum dots) on a thin remaining wetting layer. The samples have been extensively characterized by atomic force microscopy (AFM), photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM). The investigated materials systems are InP on GaInP(GaAs), InAs on InP, and GaInP on GaP. Experimentally it has been verified that InP island formation on GaInP(GaAs) is nucleation controlled. The areal island density increases with decreasing deposition temperature and increasing deposition rate. For a constant amount of island material, there is an inverse relationship between island density and size. A post-growth annealing period, in the order of minutes, can make density independent control of island sizes possible. By annealing, the islands decrease in height and show a blueshift in PL emission. Investigations in the materials system InAs/InP have shown that the island formation can be very sensitive to substrates and surface preparation. Detailed investigations of GaInP islands on GaP have shown that these islands have an uncommon shape with faced top islands situated on flat base regions. Energy dispersive X-ray spectroscopy (EDS) has shown that the top islands are In rich (In/Ga=3/2) and that the base regions are slightly Ga rich. Theoretical models for the island formation are presented. These are based on rate equations and have been used to calculate InP/GaInP(GaAs) island densities at varying deposition conditions. Average island sizes in the same materials system have been calculated with a materials balancing model. With this model it is also possible to estimate the deposition conditions that give rise to bimodal island size distributions. (Less)

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Direct Measurement of Composition of Buried Quantum Dots Using Aberration-Corrected Scanning Transmission Electron Microscopy

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

Influence of Indium Composition on the Surface Morphology of Self-Organized Inxga1-Xas Quantum Dots on Gaas Substrates

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Spatial Point Analysis of Quantum Dot Nucleation Sites on InAs Wetting Layer

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Self-Assembled InAs Quantum Dots on Patterned InP Substrates

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices