Abstract:InAs quantum dots (QD) made by self-assembled growth naturally have a random spatial and large spectral distribution. However the spatial and spectral profile of an optical cavity mode are highly predictable. To achieve the maximum interaction of single QD spontaneous emission (SE) with a cavity mode, QDs should ideally be spatially located in the cavity mode, but well isolated from nearby nonradiative surface recombination. To solve this issue, we have developed a patterned regrowth technique to place QDs near the antinode of a cavity mode. We show that the regrowth process does not affect the QDs optical properties while maintaining reasonable cavity quality factors. The PL signature of our QDs is discussed. We identify the single excitons, charged excitons and bi-excitions. Their relative intensities are decided by the excessive energy of free carriers and tunable by the sample temperature. In our research, we see strong evidence of disk sizing effect, which provide additional method to control the QD density besides material deposition and growth temperature. With this additional tunability, the QD density can be adjusted to produce low numbers of QDs (1 similar to 3 dots) per disk, so the optimal coupling of a single QD with a single cavity mode is quite plausible.

Spatial Point Analysis of Quantum Dot Nucleation Sites on InAs Wetting Layer

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

In-situ Laser Nano-Patterning for Ordered InAs/GaAs(001) Quantum Dot Growth

Influence of Surface Nano-Patterning on the Placement of InAs Quantum Dots

Mechanism of Quantum Dot Formation by Postgrowth Annealing of Wetting Layer

Spontaneously Ordered InAs Self-Assembled Quantum Dots Grown on GaAs/InP Substrate

Modeling InAs Quantum-Dot Formation on the Side Surface of GaAs Nanowires

Surface modification on InAs wetting layer by in-situ pulsed laser and the effets on quantum dot growth

&Itin&It-&Itsitu&It Laser Nano-Patterning For Ordered Inas/Gaas(001) Quantum Dot Growth

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate

The Electronic Structure of Truncated-Conical Shaped InAs/GaAs Quantum Dot with Wetting Layers

Realization of Periodic InAs QDs by In-Situ Four-Beam Laser-Interference Irradiation on the Wetting Layer

Grid-pattern Aligned InAs Self-Assembled Quantum Dots Grown on InP Substrate

Evolution of InAs/GaAs quantum dots morphology with different InAs supply

Preferential Nucleation and Growth of InAs/GaAs(001) Quantum Dots on Defected Sites by Droplet Epitaxy

Wetting layers effect on InAs/GaAs quantum dots

Self-Organized Inas Quantum Dots Formation By As/P Exchange Reaction On (001) Inp Substrate