Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Strain-controlled correlation effects in self-assembled quantum dot stacks

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Electric field induced tuning of electronic correlation in weakly confining quantum dots

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

Effects of charged defects on the electronic and optical properties of self-assembled quantum dots

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Self-assembly of quantum dots: effect of neighbor islands on the wetting in coherent Stranski-Krastanov growth

The influence of surface stress on the equilibrium shape of strained quantum dots

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots

Strain Distribution in Arbitrarily Shaped Quantum Dots with Nonuniform Composition

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Origins Of Optical Anisotropy In Artificial Atoms

Correlation Effects in Quantum Dot Wave Function Imaging

Anomalous Quantum-Confined Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots.

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots