Strain in heteroepitaxial growth

E. Somfai,L. M. Sander

DOI: https://doi.org/10.48550/arXiv.cond-mat/9909328

1999-09-23

Abstract:We use atomistic simulations with an empirical potential (EAM) to study the elastic effects of heteroepitaxial islands on adatom diffusion. We measure the diffusion barrier on pure stressed substrate and near a misfit island, as well as the detachment barrier from islands of different size.

Materials Science

What problem does this paper attempt to address?

Morphologies of Epitaxial Islands on a Lattice-Misfitted Substrate

Wang Jian-Ping,Zhou Wang-Min,Wang Chong-Yu,Yin Shu-Yuan

DOI: https://doi.org/10.1088/1674-1056/17/8/041

2008-01-01

Abstract:Under certain growth conditions for systems with a film/substrate lattice misfit, the deposited material is known to aggregate into island-like shapes. We have obtained an analytical expression of the total free energy, which consists of strain energy, surface energy and interfacial energy of a coherent island/substrate system, and the change of equilibrium aspect ratio versus the volume of the island and the misfit of lattices in the system, which provides a broad perspective on island behaviour. These then were used to study the equilibrium shapes of the system. The results show that in order to minimize the total free energy, a coherent island will have a particular height-to-width aspect ratio, called equilibrium aspect ratio, that is a function of the island volume and misfit. The aspect ratio is increased with increasing island volume at a fixed misfit, and with increasing misfit strain between the island and substrate at a fixed island volume. Moreover, the effect of misfit dislocation on the equilibrium shape of the island is also examined. The results obtained are in good agreement with experiment of observations and thus can serve as a basis for interpreting the experiments.
Self-assembled island formation in heteroepitaxial growth

Albert-László Barabási

DOI: https://doi.org/10.1063/1.118920

1997-03-31

Abstract:We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion and stress relaxation. For high misfit the system naturally evolves into a state characterized by a narrow island size distribution. The simulations indicate the existence of a strain assisted kinetic mechanism responsible for the self-assembling process, involving enhanced detachment of atoms from the edge of large islands and biased adatom diffusion.

Statistical Mechanics
Anisotropy Effect on Heteroepitaxial Growth of Self-Assembled Islands

P Liu,YW Zhang,C Lu

DOI: https://doi.org/10.1063/1.2167815

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The formation, self-assembly, and shape transition of heteroepitaxial islands during Stranski-Kranstonov growth are studied by three-dimensional computer simulations. It is shown that calculations considering surface energy anisotropy and elastic anisotropy reproduce many features of experimental results, and demonstrate the significance of their influence on island formation and self-assembly in epitaxial growth.
Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

L Huang,F Liu,XG Gong

DOI: https://doi.org/10.1103/physrevb.70.155320

IF: 3.7

2004-01-01

Physical Review B

Abstract:Strain dependence of adatom binding energies and diffusion barriers in homo- and heteroepitaxies of Si and Ge on (001) surface has been studied using first-principles calculations. In general, Si adatom binding energies and diffusion barriers are larger on Si(001) and Ge(001) surfaces than a Ge adatom, in accordance with decreasing bond strength from Si-Si to Si-Ge and to a Ge-Ge bond. The overall surface diffusion anisotropy of Si and Ge adatoms is found to be comparable on both Si(001) and Ge(001). The essentially linear dependence of binding energies and diffusion barriers on external strain is reproduced in all the cases, giving strong evidence for a priori quantitative prediction of the effect of external strain on adatom binding and surface diffusion.
A Three-Dimensional Concurrent Atomistic/continuum Analysis of an Epitaxially Strained Island

P Liu,YW Zhang,C Lu

DOI: https://doi.org/10.1063/1.1613805

IF: 2.877

2003-01-01

Journal of Applied Physics

Abstract:A three-dimensional concurrent atomistic/continuum analysis is performed to study the stress distributions in an epitaxial island. The island and the adjacent substrate are modeled by the molecular dynamics method, and the surrounding zone is modeled by the finite element method in which the nonlinear elasticity is governed by the atomic potential. An overlapping zone is defined to be the location where the atomistic and continuum models exchange necessary material information. It is found that the nonlinear elasticity based on the atomic potential is required for a smooth stress transition in the overlapping zone, and that the linear elasticity assumption significantly overestimates the stress levels at moderate and high loading levels. The implications of the present results on surface roughening driven by strain energy are discussed.
Island formation in heteroepitaxial growth

Frederik Munko,Catherine Cruz Luukkonen,Ismael S. S. Carrasco,Fábio D. A. Aarão Reis,Martin Oettel

2024-11-14

Abstract:Island formation in strain-free heteroepitaxial deposition of thin films is analyzed using kinetic Monte Carlo simulations of two minimal lattice models and scaling approaches. The transition from layer-by-layer (LBL) to island (ISL) growth is driven by a weaker binding strength of the substrate which, in the kinetic model, is equivalent to an increased diffusivity of particles on the substrate compared to particles on the film. The LBL-ISL transition region is characterized by particle fluxes between layers 1 and 2 significantly exceeding the net flux between them, which sets a quasi-equilibrium condition. Deposition on top of monolayer islands weakly contributes to second layer nucleation, in contrast with the homoepitaxial growth case. A thermodynamic approach for compact islands with one or two layers predicts the minimum size in which the second layer is stable. When this is linked to scaling expressions for submonolayer island deposition, the dependence of the ISL-LBL transition point on the kinetic parameters qualitatively matches the simulation results, with quantitative agreement in some parameter ranges. The transition occurs in the equilibrium regime of partial wetting and the convergence of the transition point upon reducing the deposition rate is very slow and practically unattainable in experiments.

Soft Condensed Matter
Nonlinear effects for island coarsening and stabilization during strained film heteroepitaxy

Champika G. Gamage,Zhi-Feng Huang

DOI: https://doi.org/10.1103/PhysRevE.87.022408

2012-09-25

Abstract:Nonlinear evolution of three-dimensional strained islands or quantum dots in heteroepitaxial thin films is studied via a continuum elasticity model and the development of a nonlinear dynamic equation governing the film morphological profile. All three regimes of island array evolution are identified and examined, including a film instability regime at early stage, a nonlinear coarsening regime at intermediate times, and the crossover to a saturated asymptotic state, with detailed behavior depending on film-substrate misfit strains but not qualitatively on finite system sizes. The phenomenon of island stabilization and saturation, which corresponds to the formation of steady but non-ordered arrays of strained quantum dots, occurs at later time for smaller misfit strain. It is found to be controlled by the strength of film-substrate wetting interaction which would constrain the valley-to-peak mass transport and hence the growth of island height, and also determined by the effect of elastic interaction between surface islands and the high-order strain energy of individual islands at late evolution stage. The results are compared to previous experimental and theoretical studies on quantum dots coarsening and saturation.

Materials Science
The formation, ripening and stability of epitaxially strained island arrays

Helen R. Eisenberg,Daniel Kandel

DOI: https://doi.org/10.48550/arXiv.cond-mat/0211237

2002-11-12

Materials Science

Abstract:We study the formation and evolution of coherent islands on lattice mismatched epitaxially strained films. Faceted islands form in films with aniostropic surface tension. Under annealing, these islands ripen until a stable array is formed, with an island density which increases with film thickness. Under deposition, an island shape transition occurs, which leads to a bimodal island size distribution. In films with isotropic surface tension we observe continual ripening of islands above a certain film thickness. A stable wavy morphology is found in thinner films.
Off-lattice Kinetic Monte Carlo simulations of strained heteroepitaxial growth

Michael Biehl,Florian Much,Christian Vey

DOI: https://doi.org/10.48550/arXiv.cond-mat/0405641

2004-05-27

Abstract:An off-lattice, continuous space Kinetic Monte Carlo (KMC) algorithm is discussed and applied in the investigation of strained heteroepitaxial crystal growth. As a starting point, we study a simplifying (1+1)-dimensional situation with inter-atomic interactions given by simple pair-potentials. The model exhibits the appearance of strain-induced misfit dislocations at a characteristic film thickness. In our simulations we observe a power law dependence of this critical thickness on the lattice misfit, which is in agreement with experimental results for semiconductor compounds. We furthermore investigate the emergence of strain induced multilayer islands or "Dots" upon an adsorbate wetting layer in the so-called Stranski-Krastanov (SK) growth mode. At a characteristic kinetic film thickness, a transition from monolayer to multilayer islands occurs. We discuss the microscopic causes of the SK-transition and its dependence on the model parameters, i.e. lattice misfit, growth rate, and substrate temperature.

Statistical Mechanics,Materials Science
Effect of the lattice misfit on the equilibrium shape of strained islands in Volmer-Weber growth

José Emilio Prieto,Ivan Markov

DOI: https://doi.org/10.1103/physrevb.82.165423

IF: 3.7

2010-10-12

Physical Review B

Abstract:We have studied the effect of the misfit on the equilibrium shape of three-dimensional pyramidal islands grown on a foreign substrate in the case of incomplete wetting (Volmer-Weber mode of growth). By means of atomistic simulations using anharmonic interaction potentials, we find that tensile islands have smaller aspect ratios compared with compressed islands owing to their better adhesion to the substrate. The average strains of consecutive layers decrease faster with thickness in compressed than in tensile islands. The strains decrease rapidly with thickness, with the consequence that above a certain height, the upper layers of the pyramid become practically unstrained and do not contribute to a further reduction in the top base. As a result, the truncated pyramids are not expected to transform into full pyramids. Our results are in good agreement with experimental observations in different systems.

physics, condensed matter, applied,materials science, multidisciplinary
Strain Tunability of Dielectric and Ferroelectric Properties in Epitaxial Lead Titanate Thin Films

Jie Wang

DOI: https://doi.org/10.1063/2.1101103

2011-01-01

Abstract:Many distinguished properties of epitaxial ferroelectric thin films can be tunable through the misfit strain. The strain tunability of ferroelectric and dielectric properties in epitaxial lead titanate ultrathin films is numerically investigated by using a phase field model, in which the surface effect of polarization is taken into account. The response of polarization to the applied electric field in the thickness direction is examined with different misfit strains at room temperature. It is found that a compressive misfit strain increases the coercive field and the remanent polarization while a tensile misfit strain decreases both of them. The nonlinear dielectric constants of the thin films with tensile misfit strains are much larger than those of the thin films without misfit strains, which are attributed to the existence of the a/c/a/c multiple domains in the thin films under tensile misfit strains.
Dislocation-free 3D islands in highly mismatched epitaxy: An equilibrium study with anharmonic interactions

Ivan Markov,Jose Emilio Prieto

DOI: https://doi.org/10.48550/arXiv.cond-mat/0208305

2002-08-15

Abstract:Accounting for the anharmonicity of the real interatomic potentials in a model in 1+1 dimensions shows that coherent 3D islands can be formed on the wetting layer in a Stranski-Krastanov growth mode predominantly in compressed overlayers. Coherent 3D islanding in expanded overlayers could be expected as an exception rather than as a rule. The thermodynamic driving force of formation of coherent 3D islands on the wetting layer of the same material is the weaker adhesion of the atoms near the islands edges. The average adhesion gets weaker with increasing island's thickness but reaches a saturation after several monolayers. A misfit greater than a critical value is a necessary condition for coherent 3D islanding. Monolayer height islands with a critical size appear as necessary precursors of the 3D islands. The 2D-3D transformation from monolayer-high islands to three-dimensional pyramids takes place through a series of stable intermediate 3D islands with discretely increasing thickness.

Materials Science
Misfit-dislocation-mediated heteroepitaxial island diffusion

A.W. Signor,Henry H. Wu,Dallas R. Trinkle

DOI: https://doi.org/10.1016/j.susc.2010.08.003

IF: 1.9

2010-10-01

Surface Science

Abstract:Scanning tunneling microscopy combined with molecular dynamics simulations reveals a dislocation-mediated island diffusion mechanism for Cu on Ag(111), a highly mismatched system. Cluster motion is tracked with atomic precision at multiple temperatures and diffusion barriers and prefactors are determined from direct measurements of hop rates. The barrier to nucleate a dislocation is sensitive to island size and shape, resulting in a non-monotonic size dependence of the diffusion barrier.

chemistry, physical,physics, condensed matter
Effects of substrate anisotropy and edge diffusion on submonolayer growth during molecular beam epitaxy: A Kinetic Monte Carlo study

Jagannath Devkota,Shankar P. Shrestha

DOI: https://doi.org/10.48550/arXiv.1912.05918

2019-12-11

Abstract:We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on the Kinetic Monte Carlo method to simulate the physical phenomena. We have found that the island morphology and growth exponent are found to be influenced by substrate anisotropy as well as edge diffusion, however they do not play a significant role in island elongation. The growth exponent and island size distribution are observed to be influenced by substrate anisotropy but are negligibly influenced by edge diffusion. We have found fractal islands when edge diffusion is excluded and compact islands when edge diffusion is included.

Materials Science,Applied Physics
Influence of island diffusion on submonolayer epitaxial growth

P. L. Krapivsky,J. F. F. Mendes,S. Redner

DOI: https://doi.org/10.1103/physrevb.59.15950

IF: 3.7

1999-06-15

Physical Review B

Abstract:We investigate the kinetics of submonolayer epitaxial growth which is driven by a fixed flux of monomers onto a substrate. Adatoms diffuse on the surface, leading to irreversible aggregation of islands. We also account for the effective diffusion of islands, which originates from hopping processes of their constituent adatoms, on the kinetics. When the diffusivity of an island of mass k scales as k-μ, the (mean-field) Smoluchowski rate equations predicts steady behavior for 0<~μ<1, with the concentration ck of islands of mass k varying as k-(3-μ)/2. For μ>~1, a quasistatic approximation of the rate equations predicts a slow continuous evolution, in which the island density increases as (ln t)μ/2. A more refined matched asymptotic expansion reveals unusual multiple-scale mass dependence for the island size distribution. Our theory also describes basic features of epitaxial growth in a more faithful model of growing circular islands. For epitaxial growth in an initial population of monomers and no external flux, a scaling approach predicts power-law island growth and a mass distribution with a behavior distinct from that of the nonzero flux system. Finally, we extend our results to one- and two-dimensional substrates. The physically relevant latter case exhibits only logarithmic corrections compared to the mean-field predictions.

physics, condensed matter, applied,materials science, multidisciplinary
Kinetic Monte Carlo Simulation of Strained Heteroepitaxial Growth with Intermixing

Arvind Baskaran,Jason Devita,Peter Smereka

DOI: https://doi.org/10.1007/s00161-009-0118-0

2009-03-28

Abstract:An efficient method for the simulation of strained heteroepitaxial growth with intermixing using kinetic Monte Carlo is presented. The model used is based on a solid-on-solid bond counting formulation in which elastic effects are incorporated using a ball and spring model. While idealized, this model nevertheless captures many aspects of heteroepitaxial growth, including nucleation, surface diffusion, and long range effects due elastic interaction. The algorithm combines a fast evaluation of the elastic displacement field with an efficient implementation of a rejection-reduced kinetic Monte Carlo based on using upper bounds for the rates. The former is achieved by using a multigrid method for global updates of the displacement field and an expanding box method for local updates. The simulations show the importance of intermixing on the growth of a strained film. Further the method is used to simulate the growth of self-assembled stacked quantum dots.

Materials Science
Computer Simulations of the Stranski–Krastanov Growth of Heteroepitaxial Films with Elastic Anisotropy

P Liu,YW Zhang,C Lu

DOI: https://doi.org/10.1016/s0039-6028(03)00007-4

IF: 1.9

2003-01-01

Surface Science

Abstract:A three-dimensional finite element method is developed to simulate the surface morphological evolution during the Stranski–Krastanov heteroepitaxial growth. In the formulation, the surface evolves through surface diffusion driven by the gradient of the surface chemical potential, which includes the elastic strain energy, elastic anisotropy and surface energy. Surface condensation rate is assumed to depend on the difference between the surface chemical potential and the chemical potential of the vapor phase. Our simulations reveal that the self-assembly of quantum dots are strongly dependent on the variation of growth rate and elastic anisotropy strength. With appropriate choice of growth rate and elastic anisotropy strength, a relatively more uniform and regular quantum dot array can be obtained.
Epitaxial growth kinetics with interacting coherent islands

H. M. Koduvely,A. Zangwill

DOI: https://doi.org/10.1103/physrevb.60.r2204

IF: 3.7

1999-07-15

Physical Review B

Abstract:The Stranski-Krastanov growth kinetics of undislocated (coherent) three-dimensional islands is studied with a self-consistent mean field rate theory that takes account of elastic interactions between the islands. The latter are presumed to facilitate the detachment of atoms from the islands with a consequent decrease in their average size. Semiquantitative agreement with experiment is found for the time evolution of the total island density and the mean island size. When combined with scaling ideas, these results provide a natural way to understand the often-observed initial increase and subsequent decrease in the width of the coherent island size distribution.

physics, condensed matter, applied,materials science, multidisciplinary
Strain In Epitaxial Bi2se3 Grown On Gan And Graphene Substrates: A Reflection High-Energy Electron Diffraction Study

bin li,xin guo,wingkin ho,maohai xie

DOI: https://doi.org/10.1063/1.4929697

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi2Se3 has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi2Se3 by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi2Se3 grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van deer Waals interaction between Bi2Se3 quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi2Se3 deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi2Se3 during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi2Se3 is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual. (C) 2015 AIP Publishing LLC.
Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials

Piotr Tatarczak,Jakub Iwański,Aleksandra Krystyna Dąbrowska,Mateusz Tokarczyk,Johannes Binder,Roman Stępniewski,Andrzej Wysmołek,Aleksandra K. Dąbrowska

DOI: https://doi.org/10.1088/1361-6528/ad18e6

IF: 3.5

2023-12-29

Nanotechnology

Abstract:Strain built-in electronic and optoelectronic devices can influence their properties and lifetime. This effect is particularly significant at the interface between two-dimensional materials and substrates. One such material is epitaxial hexagonal boron nitride (h-BN), which is grown at temperatures often exceeding 1000 °C. Due to the high growth temperature, h-BN based devices operating at room temperature can be strongly affected by strain generated during cooling due to the differences in lattice thermal expansion of h-BN and the substrate. Here, we present results of temperature-dependent Raman studies of the in-plane E 2g high phonon mode in the temperature range of 300 K - 1100 K measured for h-BN grown by metalorganic vapor phase epitaxy. We observe a change, by an order of magnitude, in the rate of the temperature-induced frequency shift for temperatures below 900 K, indicating a strong reduction of the h-BN/substrate interaction. We attribute this behavior to the creation of h-BN wrinkles which results in strain relaxation. This interpretation is supported by the observation that no change of layer/substrate interaction and no wrinkles are observed for delaminated h-BN films transferred onto silicon. Our findings demonstrate that wrinkle formation is an inherent process for two-dimensional materials on foreign substrates that has to be understood to allow for the successful engineering of devices based on epitaxially grown van der Waals heterostructures.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

Strain in heteroepitaxial growth

Morphologies of Epitaxial Islands on a Lattice-Misfitted Substrate

Self-assembled island formation in heteroepitaxial growth

Anisotropy Effect on Heteroepitaxial Growth of Self-Assembled Islands

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

A Three-Dimensional Concurrent Atomistic/continuum Analysis of an Epitaxially Strained Island

Island formation in heteroepitaxial growth

Nonlinear effects for island coarsening and stabilization during strained film heteroepitaxy

The formation, ripening and stability of epitaxially strained island arrays

Off-lattice Kinetic Monte Carlo simulations of strained heteroepitaxial growth

Effect of the lattice misfit on the equilibrium shape of strained islands in Volmer-Weber growth

Strain Tunability of Dielectric and Ferroelectric Properties in Epitaxial Lead Titanate Thin Films

Dislocation-free 3D islands in highly mismatched epitaxy: An equilibrium study with anharmonic interactions

Misfit-dislocation-mediated heteroepitaxial island diffusion

Effects of substrate anisotropy and edge diffusion on submonolayer growth during molecular beam epitaxy: A Kinetic Monte Carlo study

Influence of island diffusion on submonolayer epitaxial growth

Kinetic Monte Carlo Simulation of Strained Heteroepitaxial Growth with Intermixing

Computer Simulations of the Stranski–Krastanov Growth of Heteroepitaxial Films with Elastic Anisotropy

Epitaxial growth kinetics with interacting coherent islands

Strain In Epitaxial Bi2se3 Grown On Gan And Graphene Substrates: A Reflection High-Energy Electron Diffraction Study

Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials